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PTF10019 参数 Datasheet PDF下载

PTF10019图片预览
型号: PTF10019
PDF下载: 下载PDF文件 查看货源
内容描述: 70瓦, 860-960兆赫GOLDMOS场效应晶体管 [70 Watts, 860-960 MHz GOLDMOS Field Effect Transistor]
分类和应用: 晶体晶体管场效应晶体管
文件页数/大小: 6 页 / 325 K
品牌: ERICSSON [ ERICSSON ]
 浏览型号PTF10019的Datasheet PDF文件第1页浏览型号PTF10019的Datasheet PDF文件第2页浏览型号PTF10019的Datasheet PDF文件第4页浏览型号PTF10019的Datasheet PDF文件第5页浏览型号PTF10019的Datasheet PDF文件第6页  
PTF 10019  
e
(at P-1dB)  
Output Power  
90  
vs. Supply Voltage  
Power Gain vs. Output Power  
18  
17  
16  
15  
14  
13  
12  
11  
10  
85  
80  
75  
70  
65  
60  
55  
= 600 mA  
= 300 mA  
IDQ  
IDQ  
f = 960 MHz  
IDQ = 600 mA  
= 150 mA  
IDQ  
23  
25  
27  
29  
31  
33  
0.1  
1.0  
10.0  
100.0  
Output Power (Watts)  
Drain-Source Voltage (Volts)  
Intermodulation Distortion vs. Output Power  
-10  
Capacitance vs. Voltage *  
200  
20  
18  
16  
14  
12  
10  
8
180  
160  
140  
120  
100  
80  
VDD = 28 V  
VGS = 0 V  
-20  
f = 1 MHz  
IDQ = 600 mA  
3rd Order  
Cgs  
f1 = 959.900 MHz  
f2 = 960.000 MHz  
-30  
-40  
-50  
-60  
5th  
7th  
Cds  
60  
6
40  
4
Crss  
20  
2
0
0
0
10  
20  
30  
40  
0
10  
20  
30  
40  
50  
60  
70  
80  
Output Power (Watts-PEP)  
Supply Voltage (Volts)  
* This part is internally matched. Measurements of the  
finished product will not yield these figures.  
Bias Voltage vs. Temperature  
1.04  
1.02  
1.00  
0.98  
0.96  
0.94  
Voltage normalized to 1.0 V  
Series show current (A)  
0.40  
1.32  
2.25  
3.17  
4.09  
5.02  
-20  
30  
80  
130  
Temp. (°C)  
3