PTF 10019
e
Electrical Characteristics (100% Tested)
Characteristic
Conditions
Symbol Min
Typ
—
Max
—
Units
Volts
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate Threshold Voltage
V
GS
V
DS
V
DS
V
DS
= 0 V, I = 25 mA
V
(BR)DSS
65
—
D
= 26 V, V = 0 V
I
—
1.0
5.0
—
mA
GS
DSS
= 10 V, I = 75 mA
V
3.0
—
—
Volts
D
GS(th)
Forward Transconductance
= 10 V, I = 3 A
g
3.0
Siemens
D
fs
Maximum Ratings
Parameter
Symbol
Value
65
Unit
Vdc
Vdc
°C
Drain-Source Voltage
Gate-Source Voltage
Operating Junction Temperature
V
DSS
V
GS
±20
200
T
J
Total Device Dissipation
Above 25°C derate by
P
D
215
Watts
W/°C
1.25
Storage Temperature Range
T
–40 to +150
0.8
°C
STG
Thermal Resistance (T
= 70°C)
R
°C/W
CASE
qJC
Typical Performance
(at P-1 dB)
Typical POUT, Gain, and Efficiency
Broadband Test Fixture Performance
16
14
12
10
8
70
60
50
40
vs. Frequency
16
90
Gain (dB)
Output Power (W)
15
14
13
12
80
70
60
50
Efficiency (%)
Power Gain (dB)
- 5
30
VDD = 28 V, IDQ = 600 mA, POUT = 70 W
Return Loss (dB)
-15
20
6
Efficiency (%)
-25
10
4
800
850
900
950
1000
900
915
930
945
960
Frequency (MHz)
Frequency (MHz)
2