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PTF10019 参数 Datasheet PDF下载

PTF10019图片预览
型号: PTF10019
PDF下载: 下载PDF文件 查看货源
内容描述: 70瓦, 860-960兆赫GOLDMOS场效应晶体管 [70 Watts, 860-960 MHz GOLDMOS Field Effect Transistor]
分类和应用: 晶体晶体管场效应晶体管
文件页数/大小: 6 页 / 325 K
品牌: ERICSSON [ ERICSSON ]
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PTF 10019  
e
Electrical Characteristics (100% Tested)  
Characteristic  
Conditions  
Symbol Min  
Typ  
Max  
Units  
Volts  
Drain-Source Breakdown Voltage  
Drain-Source Leakage Current  
Gate Threshold Voltage  
V
GS  
V
DS  
V
DS  
V
DS  
= 0 V, I = 25 mA  
V
(BR)DSS  
65  
D
= 26 V, V = 0 V  
I
1.0  
5.0  
mA  
GS  
DSS  
= 10 V, I = 75 mA  
V
3.0  
Volts  
D
GS(th)  
Forward Transconductance  
= 10 V, I = 3 A  
g
3.0  
Siemens  
D
fs  
Maximum Ratings  
Parameter  
Symbol  
Value  
65  
Unit  
Vdc  
Vdc  
°C  
Drain-Source Voltage  
Gate-Source Voltage  
Operating Junction Temperature  
V
DSS  
V
GS  
±20  
200  
T
J
Total Device Dissipation  
Above 25°C derate by  
P
D
215  
Watts  
W/°C  
1.25  
Storage Temperature Range  
T
–40 to +150  
0.8  
°C  
STG  
Thermal Resistance (T  
= 70°C)  
R
°C/W  
CASE  
qJC  
Typical Performance  
(at P-1 dB)  
Typical POUT, Gain, and Efficiency  
Broadband Test Fixture Performance  
16  
14  
12  
10  
8
70  
60  
50  
40  
vs. Frequency  
16  
90  
Gain (dB)  
Output Power (W)  
15  
14  
13  
12  
80  
70  
60  
50  
Efficiency (%)  
Power Gain (dB)  
- 5  
VDD = 28 V, IDQ = 600 mA, POUT = 70 W  
Return Loss (dB)  
-15  
6
Efficiency (%)  
-25  
4
800  
850  
900  
950  
1000  
900  
915  
930  
945  
960  
Frequency (MHz)  
Frequency (MHz)  
2