PBL 3762A/2, /4
Maximum Ratings
Parameter
Symbol
Min
Max
Unit
Temperature, Humidity
Storage temperature range
Operating junction temperature range
TStg
TJ
-60
-40
+150
+140
°C
°C
Power supply, -40°C ≤ TAmb ≤ 85°C
VCC with respect to AGND
VEE with respect to AGND
VBat with respect to BGND
VCC
VEE
VBat
-0.5
-6.5
-70
6.5
0.5
VEE+0.6
V
V
V
Power dissipation
Continuous power dissipation at TAmb ≤ 70 °C
Peak power dissipation at TAmb ≤ 70 °C, t < 100 ms, tRep > 1 sec.
PD
PDP
1.5
4
W
W
Ground
Voltage between AGND and BGND
VG
-0.3
0
0.3
V
Relay driver
Ring relay supply voltage
Ring relay current
VRRly
IRRly
VBat+75
50
V
mA
Ring trip comparator
Input voltage
Input current
VDT, VDR
IDT, IDR
VBat
-5
0
5
V
mA
Digital inputs, outputs (C1, C2, E0, E1, DET)
Input voltage
VID
VOD
IOD
0
0
VCC
VCC
5
V
Output voltage (DET disabled)
Output current (DET enabled)
V
mA
TIPX and RINGX terminals, -40°C < TAmb < 85°C, VBat = -50V
TIPX or RINGX voltage, continuous (referenced to AGND), Note 1
TIPX or RINGX, pulse < 10 ms, tRep > 10 s, Note 1
TIPX or RINGX, pulse < 1 µs, tRep > 10 s, Note 1
TIP or RING, pulse < 250 ns, tRep > 10 s, Note 2
TIPX or RINGX current
VTA, VRA
VTA, VRA
VTA, VRA
VTA, VRA
ILT, ILR
VBat
VBat -20V
VBat -40V 10
VBat -70V 15
70
2
5
V
V
V
V
mA
Recommended Operating Conditions
Parameter
Symbol
Min
Max
Unit
VCC with respect to AGND
VCC
VEE
VBat
4.75
-5.25
-58
5.25
-4.75
-24
V
V
V
VEE with respect to AGND
VBat with respect to BGND, Note 3
Notes
1. A diode in series with the VBat input increases the permitted continuous voltage and pulse < 10ms to -70V. A pulse ≤ 1µs
is increased to the greater of |-70V| or |VBat - 40V|.
2. RF1, RF2 ≥ 20 Ω is also required. Pulse is supplied to TIP and RING outside RF1, RF2.
3. -24 V < VBat < -21 V may be used in applications requiring maximum vf signal amplitudes less than 3 VPk (8.75 dBm, 600 Ω).
2
ERICSSON [ ERICSSON ]
