EM610FV8T Series
merging Memory & Logic Solutions Inc.
Low Power, 128Kx8 SRAM
RECOMMENDED DC OPERATING CONDITIONS 1)
Parameter
Supply voltage
Symbol
Min
2.7
0
Typ
3.3
0
Max
3.6
0
Unit
V
VCC
VSS
VIH
VIL
Ground
V
VCC + 0.22)
0.6
Input high voltage
Input low voltage
2.2
-
-
V
V
-0.23)
1. TA= -40 to 85oC, otherwise specified
2. Overshoot: VCC +2.0 V in case of pulse width < 20ns
3. Undershoot: -2.0 V in case of pulse width < 20ns
4. Overshoot and undershoot are sampled, not 100% tested.
CAPACITANCE1) (f =1MHz, TA=25oC)
Item
Input capacitance
Symbol
Test Condition
Min
Max
Unit
CIN
VIN=0V
VIO=0V
-
8
pF
pF
Input/Ouput capacitance
CIO
-
10
1. Capacitance is sampled, not 100% tested
DC AND OPERATING CHARACTERISTICS
Parameter
Symbol
Test Conditions
Min
Typ Max
Unit
V
=V
to V
SS CC
Input leakage current
ILI
-1
-
-
-
1
1
3
mA
IN
Output leakage current
Operating power supply
ILO
ICC
CS =V , CS =V or OE=V or WE=V , V =V to V
-1
-
mA
1
IH
2
IL
IH
IL
IO
SS
CC
I
=0mA, CS =V , CS =WE=V , V =V or V
1 IL 2 IH IN IH IL
mA
IO
Cycle time=1ms, 100% duty, I =0mA,
IO
ICC1
-
-
3
mA
mA
CS <0.2V, CS >V -0.2V,
1
2
CC
V
<0.2V or V >V -0.2V
IN CC
IN
Average operating current
55ns
70ns
-
-
-
-
-
-
25
20
0.4
-
Cycle time = Min, I =0mA, 100% duty,
IO
ICC2
CS =V , CS =V
V =V or V
IH, IN IL IH
1
IL
2
I
I
= 2.1mA
Output low voltage
Output high voltage
Standby Current (TTL)
VOL
VOH
ISB
-
V
V
OL
= -1.0mA
2.4
OH
CS =V , CS =V , Other inputs=V or V
IL
-
-
0.3
mA
1
IH
2
IL
IH
CS >V -0.2V, CS >V -0.2V (CS controlled)
1
CC
2
CC
1
or 0V<CS <0.2V (CS controlled),
2
2
LL
LF
Other inputs=0~V
0.51)
CC
ISB1
Standby Current (CMOS)
-
5
mA
o
(Typ. condition : V =3.3V @ 25 C)
CC
o
(Max. condition : V =3.6V @ 85 C)
CC
NOTES
1. Typical values are measured at Vcc=3.3V, TA=25oC and not 100% tested.
4
EMLSI [ Emerging Memory & Logic Solutions Inc ]
