EM610FV8T Series
merging Memory & Logic Solutions Inc.
Low Power, 128Kx8 SRAM
FEATURES
GENERAL DESCRIPTION
• Process Technology : 0.18mm Full CMOS
• Organization : 128K x 8 bit
• Power Supply Voltage : 2.7V ~ 3.6V
• Low Data Retention Voltage : 1.5V(Min)
• Three state output and TTL Compatible
• Package Type : 32-TSOP1
The EM610FV8T families are fabricated by EMLSI’ s
advanced full CMOS process technology. The families
support industrial temperature range and Chip Scale
Package for user flexibility of system design. The fami-
lies also supports low data retention voltage for battery
back-up operation with low data retention current.
PRODUCT FAMILY
Power Dissipation
Product
Family
Operating
Temperature
Vcc
Range
PKG
Type
Speed
Standby
(ISB1, Typ)
Operating
(ICC1.Max)
Industrial (-40 ~ 85oC)
2.7V~3.6V
551) / 70ns
0.5 mA2)
EM610FV8T
3 mA
32-TSOP1
1. The parameter is measured with 30pF test load.
2. Typical values are measured at Vcc=3.3V, TA=25oC and not 100% tested.
PIN DESCRIPTION
FUNCTIONAL BLOCK DIAGRAM
1
2
32
31
30
29
OE
A11
A9
A10
CS1
IO8
3
A8
Pre-charge Circuit
4
A13
5
28
IO7
IO6
WE
6
27
CS2
7
26
IO5
A15
32 - TSOP
Type1 - Forward
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
8
9
25
24
I O 4
VSS
VCC
NC
VCC
VSS
10
11
23
22
I/O3
I/O2
A16
A14
A12
Memory Array
12
13
21
20
I/O1
A0
A7
A6
1024 x 1024
14
15
19
A1
A5
A4
18
17
A2
A3
16
Data
Cont
I/O1 ~ I/O8
I/O Circuit
Column Select
Name
Function
Name
Function
A
A
14 15 16
A
A13
A10 A11
A
12
CS ,CS
Chip select inputs
WE Write Enable input
1
2
OE
Output Enable input
Address Inputs
Vcc Power Supply
Vss Ground
WE
OE
A ~A
0
16
Control Logic
CS1
CS2
I/O ~I/O
Data Inputs/outputs
NC
No Connection
1
8
2
EMLSI [ Emerging Memory & Logic Solutions Inc ]
