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EM39LV088 参数 Datasheet PDF下载

EM39LV088图片预览
型号: EM39LV088
PDF下载: 下载PDF文件 查看货源
内容描述: 8M位( 1Mx8 )闪存 [8M Bits (1Mx8) Flash Memory]
分类和应用: 闪存
文件页数/大小: 22 页 / 271 K
品牌: ELAN [ ELAN MICROELECTRONICS CORP ]
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EM39LV088  
8M Bits (1Mx8) Flash Memory  
SPECIFICATION  
Pin Description  
Pin Name  
A0–A19  
Function  
20 addresses  
DQ7–DQ0  
CE#  
Data inputs/outputs  
Chip enable  
OE#  
Output enable  
Write enable  
WE#  
VDD  
2.7-3.6 volt single power supply  
Device ground  
VSS  
NC  
Pin not connected internally  
Table 1: Pin Description  
Device Operation  
The EM39LV088 uses Commands to initiate the memory operation functions. The  
Commands are written to the device by asserting WE# Low while keeping CE# Low. The  
address bus is latched on the falling edge of WE# or CE#, whichever occurs last. The data  
bus is latched on the rising edge of WE# or CE#, whichever occurs first.  
Read  
The Read operation of the EM39LV088 is controlled by CE# and OE#. Both have to be Low  
for the system to obtain data from the outputs. CE# is used for device selection. When CE#  
is high, the chip is deselected and only standby power is consumed. OE# is the output  
control and is used to gate data from the output pins. The data bus is in high impedance state  
when either CE# or OE# is high. Refer to the Read Cycle Timing Diagram in Figure 1 for  
further details.  
Byte Program  
The EM39LV088 is programmed on a byte-by-byte basis. Before programming, the sector  
where the byte is located; must be erased completely. The Program operation is  
accomplished in three steps:  
„
The first step is a three-byte load sequence for Software Data Protection.  
„
The second step is to load byte address and byte data. During the Byte Program  
operation, the addresses are latched on the falling edge of either CE# or WE#, whichever  
occurs last; and the data is latched on the rising edge of either CE# or WE#, whichever  
occurs first.  
„
The third step is the internal Program operation which is initiated after the rising edge of  
the fourth WE# or CE#, whichever occurs first. The Program operation, once initiated,  
will be completed within 20 µs. See Figures 2 and 3 for WE# and CE# controlled  
Program operation timing diagrams respectively and Figure 12 for flowchart.  
This specification is subject to change without further notice. (04.09.2004 V1.0)  
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