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EBJ21UE8BFU0-GN-F 参数 Datasheet PDF下载

EBJ21UE8BFU0-GN-F图片预览
型号: EBJ21UE8BFU0-GN-F
PDF下载: 下载PDF文件 查看货源
内容描述: 2GB DDR3 SDRAM SO- DIMM [2GB DDR3 SDRAM SO-DIMM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 16 页 / 247 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EBJ21UE8BFU0  
Pin Description  
Pin name  
Function  
Address input  
Row address  
Column address  
A0 to A13  
A0 to A13  
A0 to A9  
A10 (AP)  
A12 (/BC)  
BA0, BA1, BA2  
/RAS  
Auto precharge  
Burst chop  
Bank select address  
Row address strobe  
/CAS  
Column address strobe  
Write enable  
/WE  
/CS0, /CS1  
CKE0, CKE1  
CK0, CK1  
/CK0, /CK1  
ODT0, ODT1  
DQ0 to DQ63  
DQS0 to DQS7, /DQS0 to /DQS7  
DM0 to DM7  
SCL  
Chip select  
Clock enable  
Clock input  
Differential clock input  
ODT control  
Data input/output  
Input and output data strobe  
Input mask  
Clock input for serial PD  
Data input/output for serial PD  
Address input for serial PD  
Power for internal circuit  
Power for serial PD  
Reference voltage for CA  
Reference voltage for DQ  
Ground  
SDA  
SA0, SA1  
VDD*1  
VDDSPD  
VREFCA  
VREFDQ  
VSS  
VTT  
I/O termination supply for SDRAM  
Set DRAM to a known state  
No connection  
/RESET  
NC  
Note: 1. The VDD and VDDQ pins are tied common to a single power-plane on these designs.  
Front side  
1 pin  
2 pin  
71 pin 73 pin  
203 pin  
204 pin  
74 pin  
72 pin  
Back side  
Data Sheet E1642E30 (Ver. 3.0)  
4