EBJ21UE8BBF0
Hex
Byte No. Function described
SDRAM minimum active to active /auto-
refresh time (tRC), LSB
Bit7 Bit6 Bit5 Bit4 Bit3 Bit2 Bit1 Bit0 value Comments
23
1
0
0
0
1
1
0
0
8CH 49.5ns
-DJ
-AE
1
1
0
0
0
1
1
0
0
0
1
1
0
0
1
0
95H
50.625ns
-8C
A4H 52.5ns
SDRAM minimum refresh recovery time
delay (tRFC), LSB
24
25
26
27
28
0
0
0
0
1
0
0
0
1
1
0
1
1
0
0
1
1
0
0
1
1
0
1
0
0
0
1
0
0
70H
03H
110ns
110ns
SDRAM minimum refresh recovery time
delay (tRFC), MSB
0
SDRAM minimum internal write to read
command delay (tWTR)
1
1
3CH 7.5ns
3CH 7.5ns
SDRAM minimum internal read to
precharge command delay (tRTP)
Upper nibble for tFAW
-DJ
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
00H
01H
-AE, -8C
0
Minimum four activate window delay time
29
(tFAW)
-DJ
1
1
1
1
0
0
0
0
F0H
30ns
-AE
0
0
1
0
1
0
1
0
0
0
0
0
1
0
0
1
0
0
0
0
1
0
0
1
2CH 37.5ns
-8C
40H
83H
40ns
30
31
SDRAM output drivers supported
DLL-off/RZQ/6, 7
PASR/ 2X refresh rate
at +85°C to +95°C
SDRAM refresh options
1
0
0
0
0
0
0
1
81H
32
33
Module thermal sensor
SDRAM device type
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
0
0
0
0
1
0
0
0
0
0
1
0
0
0
0
0
1
0
0
0
0
0
1
1
1
00H
00H
00H
0FH
11H
01H
Not incorporated
Standard
34 to 59 Reserved
—
60
61
62
Module nominal height
29 < height ≤ 30mm
Module maximum thickness
Reference raw card used
Raw Card B
Mirrored
Address mapping from edge connecter to
DRAM
63
0
0
0
1
0
0
0
1
0
0
0
1
0
0
0
1
0
0
0
1
0
0
0
1
0
0
1
1
1
0
0
0
01H
00H
02H
64 to
116
Module specific section
—
Module ID: manufacturer’s JEDEC ID
code, LSB
117
118
Elpida Memory
Module ID: manufacturer’s JEDEC ID
code, MSB
FEH Elpida Memory
119
120
121
Module ID: manufacturing location
Module ID: manufacturing date
Module ID: manufacturing date
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
×
××
××
××
Year code (BCD)
Week code (BCD)
122 to
125
Module ID: module serial number
×
×
×
×
×
×
×
×
××
Cyclical redundancy code (CRC)
-DJ
126
1
1
0
1
1
1
0
0
DCH
-AE
-8C
1
0
1
1
1
1
0
1
1
0
0
0
0
0
1
1
E9H
71H
Data Sheet E1409E30 (Ver. 3.0)
7
ELPIDA [ ELPIDA MEMORY ]
