DATA SHEET
4GB Fully Buffered DIMM
EBE41FE4ACFR
Specifications
•
Density: 4GB
•
Organization
512M words
×
72 bits, 2 ranks
•
Mounting 36 pieces of 1G bits DDR2 SDRAM sealed
in FBGA
•
Package
240-pin fully buffered, socket type dual in line
memory module (FB-DIMM)
PCB height: 30.35mm
Lead pitch: 1.00mm
Advanced Memory Buffer (AMB): 655-ball FCBGA
Lead-free (RoHS compliant)
•
Power supply
DDR2 SDRAM: VDD
=
1.8V
±
0.1V
AMB: VCC
=
1.5V
+
0.075V/
−0.045V
•
Data rate: 667Mbps (max.)
•
Eight internal banks for concurrent operation
(components)
•
Interface: SSTL_18
•
Burst lengths (BL): 4, 8
•
/CAS Latency (CL): 3, 4, 5
•
Precharge: auto precharge option for each burst
access
•
Refresh: auto-refresh, self-refresh
•
Refresh cycles: 8192 cycles/64ms
Average refresh period
7.8µs at 0°C
≤
TC
≤ +85°C
3.9µs at
+85°C <
TC
≤ +95°C
•
Operating case temperature range
TC = 0°C to +95°C
Features
•
JEDEC standard Raw Card E Design
•
Industry Standard Advanced Memory Buffer (AMB)
•
High-speed differential point-to-point link interface at
1.5V (JEDEC spec)
14 north-bound (NB) high speed serial lanes
10 south-bound (SB) high speed serial lanes
•
Various features/modes:
MemBIST and IBIST test functions
Transparent mode and direct access mode for
DRAM testing
Interface for a thermal sensor and status indicator
•
Channel error detection and reporting
•
Automatic DDR2 SDRAM bus and channel
calibration
•
SPD (serial presence detect) with 1piece of 256 byte
serial EEPROM
Note: Warranty void if removed DIMM heat
spreader.
Performance
FB-DIMM
System clock
frequency
167MHz
Speed grade
PC2-5300F
Peak channel
throughput
8.0GByte/s
FB-DIMM link data rate
4.0Gbps
DDR2 SDRAM
Speed Grade
DDR2-667 (5-5-5)
DDR data rate
667Mbps
Document No. E1344E20 (Ver. 2.0)
Date Published October 2008 (K) Japan
Printed in Japan
URL: http://www.elpida.com
Elpida
Memory, Inc. 2008