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E52287A80D 参数 Datasheet PDF下载

E52287A80D图片预览
型号: E52287A80D
PDF下载: 下载PDF文件 查看货源
内容描述: [Three integrated Linear Current Drivers (3*60mA)]
分类和应用:
文件页数/大小: 20 页 / 1152 K
品牌: ELMOS [ ELMOS SEMICONDUCTOR AG ]
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Triple 60mA Linear LED Controller  
Preliminary Information - Jan 21, 2015  
E522.84/85/86/87  
Electrical Characteristics (continued)  
(VVS = 5V to 25V, TJ= -40°C to +150°C and recommended operating range, unless otherwise noted. Typical values are at VVS  
=
14V and TJ = 25°C. Positive currents flow into the device pins.)  
Description  
IR Driver  
Condition  
Symbol  
Min  
Typ  
Max  
Unit  
VENA > 3.3V  
TJ < TJ,DERATE  
Internal Nominal Reference to drive RIRx  
VREF,NOM  
VREF,HV  
1.44  
1.5  
0.9  
1.56  
V
V
V
Internal Reference Derating in case of high  
VVS  
VVS > 29V  
Recommended Operating Range for Exter-  
nal Reference at ENA 1)  
Condition  
1.2V < VENA < 3V  
VVS rising  
VREF,EXT  
0.6  
25  
VREF,NOM  
Internal Divider Ratio between ENA and IR  
in case of external Reference Voltage  
NENA,DIV  
2
Internal Reference Derating Threshold for  
high VVS  
VVS,DERATE  
VVS,DERATE,HYST  
TJ,DERATE  
27  
1
29  
V
Hysteresis for Voltage Derating Threshold  
VVS falling  
VENA > 3.3V  
V
Starting Junction Temperature for internal  
Reference Voltage Derating*)  
138  
-26.7  
°C  
VENA > 3.3V  
TJ > TJ,DERATE  
Internal Reference Voltage Derating Slope*)  
RUN Interface and Diagnostics  
dVJ,DERATE  
mV/K  
VVS = 14V  
VRUN = 0V  
RUN Pin Pullup Current to VS  
IRUN,PU  
-40  
3
µA  
V
RUN Bus Comparator,  
High Threshold  
VRUN,ENA  
VRUN,STBY  
tRUN,DEL  
RUN Bus Comparator,  
Low Threshold  
2.5  
4
V
Rising and falling  
edge  
RUN State Change Debouncing *)  
µs  
V
VVS = 14V  
IRUN = 2mA  
RUN Low Level, Nominal  
VRUN,DRV1  
0.2  
0.8  
2
VS Pin ‘open’  
IRUN = 2mA  
TJ < 125°C  
RUN Low Level, low VS or VS Open  
VRUN,DRV2  
1.4  
V
Current Limitation for RUN driving 'low'  
LEDx Short Circuit Detection Threshold  
VRUN = 5V  
IRUN,LIM  
10  
22  
1
mA  
V
Relative to VGND  
VLEDx,SHORT  
ILEDx,OPEN  
VVS,DIAG1  
VVS,DIAG2  
VVS,DIAG3  
VVS,DIAG4  
VVS,DIAG,HYST  
0.9  
1.1  
Open Detection Threshold at LEDx, relative RIRx = 12kΩ  
to nominal configured current  
VENA > 3V 1)  
Open Diagnostic Enable Threshold at VS for E522.84 1)  
E522.84 VVS rising  
Open Diagnostic Enable Threshold at VS for E522.85 1)  
E522.85 VVS rising  
Open Diagnostic Enable Threshold at VS for E522.86 1)  
E522.86 VVS rising  
27.5  
7.05  
8.5  
37.5  
7.5  
9.0  
10  
15  
0.5  
47.5  
7.95  
9.5  
%
V
V
9.45  
14.2  
10.55  
15.8  
V
Open Diagnostic Enable Threshold at VS for E522.87 1)  
E522.87  
VVS rising  
Open Diagnostic Enable Threshold at VS,  
Hysteresis  
VVS falling  
V
*) Not tested in production  
Notes on table section IR Driver  
1) Take 2:1 divider at ENA into account  
Notes on table section Run Inrerface and Diagnostics  
1) Take 2:1 divider at ENA into account  
This document contains information on a pre-production product. Elmos Semiconductor AG reserves the right to change specifications and information herein without notice.  
Elmos Semiconductor AG  
Data Sheet  
QM-No.: 25DS0137E.00  
7/20