Complementary MOSFET
ELM34601AA-N
■Electrical Characteristics (P-ch)
Ta=25°C
Parameter
Symbol
Conditions
Min. Typ. Max. Unit Note
STATIC PARAMETERS
Drain source breakdown voltage
-
BVdss Id=
-250μA, Vgs=0V
-30
V
Vds=-24V, Vgs=0V
-1
Zero gate voltage drain current
Idss
μA
Vds=-20V, Vgs=0V, Tj=55°C
-10
Gate-body leakage current
Gate threshold voltage
On state drain current
Igss Vds=0V, Vgs=±20V
Vgs(th) Vds=Vgs, Id=-250μA
Id(on) Vgs=-10V, Vds=-5V
±100 nA
-0.8 -1.5 -2.5
-24
V
A
1
1
Vgs=-10V, Id=-6A
Rds(on)
28
44
7
35
60
Static drain source on resistance
mΩ
-
-
Vgs=-4.5V, Id=-5A
Forward transconductance
Diode forward voltage
Gfs Vds=-10V, Id=-5A
S
1
1
Vsd If=-1A, Vgs=0V
-1
-3
-6
V
A
A
Max.body diode continuous current
-
Is
Pulsed current
Ism
3
DYNAMIC PARAMETERS
Input capacitance
Ciss
970
370
180
pF
pF
pF
Output capacitance
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge
Coss Vgs=0V, Vds=-10V, f=1MHz
Crss
Qg
28
6
nC
nC
nC
ns
2
2
2
2
2
2
2
Vgs=-10V, Vds=-15V
Gate-source charge
Gate-drain charge
Qgs
Id=-5A
Qgd
12
Turn-on delay time
Turn-on rise time
td(on)
20
tr
Vgs=-10V, Vds=-15V
17
ns
Turn-off delay time
Turn-off fall time
td(off) Id≈-1A, Rl=1Ω, Rgen=6Ω
160
75
ns
tf
ns
Body diode reverse recovery time
trr If=-5A, dl/dt=100A/μs
Qrr
15.5
7.9
ns
-
Body diode reverse recovery charge
-
nC
NOTE :
1. Pulse test : Pulsed width≤300μsec and Duty cycle≤2%.
2. Independent of operating temperature.
3. Pulsed width limited by maximum junction temperature.
7 - 5
ELM-TECH [ ELM Technology Corporation ]
