Complementary MOSFET
ELM34601AA-N
■Electrical Characteristics (N-ch)
Ta=25°C
Parameter
Symbol
Conditions
Min. Typ. Max. Unit Note
STATIC PARAMETERS
Drain source breakdown voltage
-
BVdss Id=250μA, Vgs=0V
30
V
Vds=24V, Vgs=0V
Idss
1
Zero gate voltage drain current
μA
Vds=20V, Vgs=0V, Tj=55°C
10
±
±
Gate body leakage current
-
Igss Vds=0V, Vgs= 20V
100 nA
Gate threshold voltage
On state drain current
Vgs(th) Vds=Vgs, Id=250μA
Id(on) Vgs=10V, Vds=5V
0.8
28
1.5
2.5
V
A
1
1
Vgs=10V, Id=7A
Rds(on)
14
21
8
21
32
Static drain source on resistance
mΩ
-
-
Vgs=4.5V, Id=6A
Forward transconductance
Diode forward voltage
Gfs Vds=10V, Id=5A
S
1
1
Vsd If=1A, Vgs=0V
1
3
6
V
A
A
Max.body diode continuous current
-
Is
Pulsed current
Ism
3
DYNAMIC PARAMETERS
Input capacitance
Ciss
1700
380
pF
pF
pF
Output capacitance
Coss Vgs=0V, Vds=10V, f=1MHz
Crss
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge
260
Qg
40
28
nC
nC
nC
ns
2
2
2
2
2
2
2
Gate source charge
Qgs Vgs=10V, Vds=15V, Id=6A
-
Gate drain charge
Qgd
12
-
Turn on delay time
td(on)
20
-
Turn on rise time
tr
Vgs=10V, Vds=15V, Id≈1A
10
ns
-
Turn off delay time
td(off) Rgen=6Ω
120
35
ns
-
Turn off fall time
tf
ns
-
Body diode reverse recovery time
trr If=5A, dl/dt=100A/μs
Qrr
15.5
7.9
ns
-
Body diode reverse recovery charge
-
nC
NOTE :
1. Pulse test : Pulsed width≤300μsec and Duty cycle≤2%.
2. Independent of operating temperature.
3. Pulsed width limited by maximum junction temperature.
4. Duty cycle ≤ 1%.
7 - 2
ELM-TECH [ ELM Technology Corporation ]
