Single P-channel MOSFET
ELM13415CA-S
■Typical electrical and thermal characteristics
40
40
15
15
-8V
-8V
-4.5V
-4.5V
-3.0V
-3.0V
V
=-5V
VDDSS=-5V
35
35
12
12
30
30
-2.5V
-2.5V
25
25
9
9
20
20
6
6
-2.0V
-2.0V
15
15
10
10
3
3
125�C
125�C
25�C
25�C
5
5
V
=-1.5V
VGGSS=-1.5V
0
0
0
0
0
0
0.5
0.5
1
1
1.5
1.5
2
2
0
0
1
1
2
2
3
3
4
4
5
5
-V (Volts)
-VGS(Volts)
Figure 2: TransferGCSharacteristics (Note E)
Figure 2: Transfer Characteristics (Note E)
-V (Volts)
-VDS (Volts)
Fig 1: On-RegionDCSharacteristics (Note E)
Fig 1: On-Region Characteristics (Note E)
100
100
1.60
1.60
I =-4A, V =-4.5V
IDD=-4A, VGGSS=-4.5V
V
=-1.5V
VGGSS=-1.5V
80
80
1.40
1.40
I =-4A, V =-2.5V
IDD=-4A, VGGSS=-2.5V
17
5
2
60
60
1.20
1.20
I =-2A, V =-1.8V
IDD=-2A, VGGSS=-1.8V
V
=-1.8V
VGGSS=-1.8V
10
V
=-2.5V
VGGSS=-2.5V
40
40
1.00
1.00
V
=-4.5V
VGGSS=-4.5V
0.80
0.80
20
20
0
0
25
25
50
50
75
75
100
100
125
125
150
150
175
175
0
2
4
6
8
8
10
10
0
2
4
6
-I (A)
-IDD (A)
0
18
Temperature (°C)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Figure 3: On-Resistance vs. Drain Current and Gate
Figure 4: On-Resistance vs. Junction Temperature
Figure 4: On-Resistance vs. Junction Temperature
Voltage (Note E)
Voltage (Note E)
(Note E)
(Note E)
120
100
80
1.0E+01
ID=-4A
1.0E+00
40
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125�
25�
125�
60
40
25�
20
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
-VGS (Volts)
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
5 - 3
ELM-TECH [ ELM Technology Corporation ]
