Single P-channel MOSFET
ELM13415CA-S
■Electrical characteristics
Ta=25°C
Parameter
Symbol
Condition
Min.
-20
Typ.
Max. Unit
STATIC PARAMETERS
Drain-source breakdown voltage
BVdss Id=-250μA, Vgs=0V
V
-1
Vds=-20V
Idss
Zero gate voltage drain current
μA
-5
Vgs=0V
Tj=55°C
Gate-body leakage current
Gate threshold voltage
On state drain current
Igss Vds=0V, Vgs=±8V
Vgs(th) Vds=Vgs, Id=-250μA
Id(on) Vgs=-4.5V, Vds=-5V
Vgs=-4.5V
±10
μA
V
-0.30 -0.57 -0.90
-30
A
37
52
45
54
65
20
43
62
54
73
Id=-4A
Tj=125°C
Static drain-source on-resistance
Rds(on) Vgs=-2.5V, Id=-4A
Vgs=-1.8V, Id=-2A
Vgs=-1.5V, Id=-1A
Gfs Vds=-5V, Id=-4A
Vsd Is=-1A, Vgs=0V
Is
mΩ
Forward transconductance
Diode forward voltage
Max. body-diode continuous current
DYNAMIC PARAMETERS
Input capacitance
S
V
A
-0.64 -1.00
-2
Ciss
620
80
780
115
80
940
150
110
pF
pF
pF
Output capacitance
Coss Vgs=0V, Vds=-10V, f=1MHz
Crss
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge
50
Qg
7.4
1.2
1.0
9.3
1.5
1.8
120
240
2.8
2.0
14
11.0
1.8
nC
nC
nC
ns
Vgs=-4.5V, Vds=-10V
Gate-source charge
Qgs
Id=-4A
Qgd
Gate-drain charge
2.5
Turn-on delay time
td(on)
Turn-on rise time
tr
Vgs=-4.5V, Vds=-10V
ns
Turn-off delay time
td(off) Rl=2.5Ω, Rgen=3Ω
tf
ns
Turn-off fall time
ns
Body diode reverse recovery time
Body diode reverse recovery charge
NOTE :
trr
If=-4A, dl/dt=500A/μs
11
24
17
36
ns
Qrr If=-4A, dl/dt=500A/μs
30
nC
1. The value of Rθja is measured with the device mounted on 1in2 FR-4 board of 2oz. Copper, in still air environment
with Ta =25°C. The value in any given application depends on the user's specific board design.
2. The power dissipation Pd is based on Tj(Max)=150°C, using 10s junction-to-ambient thermal resistance.
3. Repetitive rating, pulse width limited by junction temperature Tj(Max)=150°C. Ratings are based on low frequency
and duty cycles to keep initial Tj=25°C.
4. The Rθja is the sum of the thermal impedence from junction to lead Rθjl and lead to ambient.
5. The static characteristics in Figures 1 to 6 are obtained using <300μs pulses, duty cycle 0.5% max.
6. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted
on 1in2 FR-4 board with 2oz.Copper, assuming a maximum junction temperature of Tj(Max)=150°C. The SOA
curve provides a single pulse rating.
5 - 2
ELM-TECH [ ELM Technology Corporation ]
