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BTN3501E3 参数 Datasheet PDF下载

BTN3501E3图片预览
型号: BTN3501E3
PDF下载: 下载PDF文件 查看货源
内容描述: 高速开关二极管 [High Speed Switching diode]
分类和应用: 二极管开关
文件页数/大小: 4 页 / 169 K
品牌: CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
 浏览型号BTN3501E3的Datasheet PDF文件第1页浏览型号BTN3501E3的Datasheet PDF文件第3页浏览型号BTN3501E3的Datasheet PDF文件第4页  
Spec. No. : C606E3  
Issued Date : 2004.08.18  
Revised Date :  
CYStech Electronics Corp.  
Page No. : 2/4  
Characteristics (Ta=25°C)  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Test Conditions  
BVCEO(SUS)  
80  
-
-
10  
50  
0.6  
1.5  
-
V
µA  
µA  
V
IC=30mA, IB=0  
ICES  
-
-
VCE=80V, VBE=0  
VEB=5V, IC=0  
IEBO  
-
-
*VCE(sat)  
*VBE(sat)  
*hFE  
-
0.3  
1.0  
-
IC=8A, IB=0.4A  
IC=8A, IB=0.8A  
VCE=1V, IC=2A  
VCE=1V, IC=4A  
VCE=6V, IC=500mA, f=20MHz  
VCB=10V, f=1MHz  
-
V
60  
40  
-
-
-
*hFE  
-
-
fT  
50  
130  
-
-
MHz  
pF  
Cob  
-
*Pulse Test : Pulse Width 380µs, Duty Cycle2%  
Characteristic Curves  
Grounded Emitter Output Characteristics  
Grounded Emitter Output Characteristics  
5000  
2500  
2000  
1500  
1000  
500  
25mA  
20mA  
15mA  
4500  
4000  
3500  
3000  
2500  
2000  
1500  
1000  
500  
10mA  
8mA  
6mA  
4mA  
10mA  
5mA  
2mA  
IB=0mA  
IB=0mA  
0
0
0
2
4
6
0
1
2
3
4
5
6
Collector To Emitter Voltage---VCE(V)  
Collector To Emitter Voltage---VCE(V)  
Grounded Emitter Output Characteristics  
Grounded Emitter Output Characteristics  
140  
700  
600  
500  
400  
300  
200  
100  
0
500uA  
400uA  
2.5mA  
2mA  
120  
100  
80  
60  
40  
20  
0
300uA  
1.5mA  
1mA  
200uA  
100uA  
500uA  
IB=0uA  
IB=0uA  
0
1
2
3
4
5
6
0
1
2
3
4
5
6
Collector To Emitter Voltage---VCE(V)  
Collector To Emitter Voltage---VCE(V)  
BTN3501E3  
CYStek Product Specification