CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Spec. No. : C606E3
Issued Date :
2004.08.18
Revised Date :
Page No. : 1/4
BTN3501E3
•
Low V
CE
(sat)
•
High BV
CEO
•
Excellent current gain characteristics
Features
Symbol
BTN3501E3
Outline
TO-220AB
B：Base
C：Collector
E：Emitter
BCE
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation @ T
A
=25℃
Power Dissipation @ T
C
=25℃
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Junction Temperature
Storage Temperature
Note : 1. Single Pulse , Pw≦380µs,Duty≦2%.
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
D
P
D
R
θJA
R
θJC
Tj
Tstg
Limits
80
80
6
10
20
(Note 1)
2
50
62.5
2.5
150
-55~+150
Unit
V
V
V
A
W
°C/W
°C/W
°C
°C
BTN3501E3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
