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BTD882J3 参数 Datasheet PDF下载

BTD882J3图片预览
型号: BTD882J3
PDF下载: 下载PDF文件 查看货源
内容描述: 低VCESAT NPN外延平面晶体管 [Low Vcesat NPN Epitaxial Planar Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 7 页 / 247 K
品牌: CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
 浏览型号BTD882J3的Datasheet PDF文件第1页浏览型号BTD882J3的Datasheet PDF文件第2页浏览型号BTD882J3的Datasheet PDF文件第4页浏览型号BTD882J3的Datasheet PDF文件第5页浏览型号BTD882J3的Datasheet PDF文件第6页浏览型号BTD882J3的Datasheet PDF文件第7页  
Spec. No. : C848J3-H  
Issued Date : 2003.04.02  
Revised Date :2009.02.04  
Page No. : 3/7  
CYStech Electronics Corp.  
Characteristic Curves  
Emitter Grounded Output Characteristics  
Emitter Grounded Output Characteristics  
0.25  
0.2  
1
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
IB=500uA  
IB=2.5mA  
IB=2mA  
IB=400uA  
IB=300uA  
IB=200uA  
IB=100uA  
IB=1.5mA  
IB=1mA  
0.15  
0.1  
IB=500uA  
0.05  
0
IB=0  
5
IB=0  
0
1
2
3
4
5
6
0
1
2
3
4
6
Collector-to-Emitter Voltage---VCE(V)  
Collector-to-Emitter Voltage---VCE(V)  
Emitter Grounded Output Characteristics  
Emitter Grounded Output Characteristics  
IB=25mA  
3
2.5  
2
4.5  
4
IB=10mA  
IB=8mA  
IB=6mA  
IB=20mA  
IB=15mA  
3.5  
3
IB=10mA  
IB=5mA  
IB=4mA  
IB=2mA  
2.5  
2
1.5  
1
1.5  
1
0.5  
0
0.5  
0
IB=0  
IB=0  
5
0
1
2
3
4
5
6
0
1
2
3
4
6
Collector-to-Emitter Voltage---VCE(V)  
Collector-to-Emitter Voltage---VCE(V)  
Current Gain vs Collector Current  
Saturation Voltage vs Collector Current  
1000  
100  
10  
10000  
1000  
100  
VCE=5V  
VCE(SAT)  
IC=100IB  
IC=50IB  
VCE=2V  
VCE=1V  
1000  
IC=20IB  
10  
1
10  
100  
1000  
10000  
1
10  
100  
10000  
Collector Current---IC(mA)  
Collector Current---IC(mA)  
BTD882J3  
CYStek Product Specification