CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Spec. No. : C848J3-H
Issued Date : 2003.04.02
Revised Date :2009.02.04
Page No. : 1/7
BTD882J3
Features
•
Low V
CE
(sat), typically 0.25V at I
C
/ I
B
= 2A / 0.2A
•
Excellent current gain characteristics
•
Complementary to BTB772J3
•
RoHS compliant package
BV
CEO
I
C
R
CESAT
30V
3A
125mΩ typ.
Symbol
BTD882J3
Outline
TO-252
B：Base
C：Collector
E：Emitter
B C E
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Note : *1. Single Pulse Pw
≦
350us,Duty
≦
2%.
Symbol
V
CBO
V
CEO
V
EBO
I
C
(DC)
I
C
(Pulse)
Pd(Ta=25
℃
)
Pd(Tc=25
℃
)
Tj
Tstg
Limit
40
30
5
3
7
1
10
150
-55~+150
Unit
V
V
V
A
A
W
°C
°C
*1
BTD882J3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
