Spec. No. : C654N3
Issued Date : 2017.08.02
Revised Date : 2017.10.06
Page No. : 4/7
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Built-in Diode Characteristics
On Voltage vs Collector Current
10000
1000
100
10000
1000
100
VBEON@VCE=4V
-40°C
-40°C
0°C
0°C
25°C
25°C
85°C
140°C
85°C
140°C
1
10
100
1000
10000
1
10
100
1000
10000
IC, Collector Current(mA)
IF, Forward Current(mA)
Power Derating Curves
Capacitance vs Reverse-Biased Voltage
0.35
0.3
100
0.25
0.2
Cob
0.15
0.1
Cib
0.05
0
10
0.1
1
10
100
0
25
50
75 100 125 150 175 200
,
TA, Ambient Temperature(℃)
VR Reverse-Biased Voltage(V)
Power Derating Curve
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
25
50
75 100 125 150 175 200
TC, Case Temeprature(℃)
BTD2195SN3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
