Spec. No. : C654N3
Issued Date : 2017.08.02
Revised Date : 2017.10.06
Page No. : 2/7
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Symbol
Limits
Unit
V
VCBO
VCEO
VEBO
IC
150
150
5
2
4
A
Collector Current (Pulse)
ICP
(Note 1)
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Power Dissipation @ TA=25°C
Power Dissipation @ TC=25°C
Opeearting Junction Temperature Range
Storage Temperature Range
RθJA
RθJC
500
100
0.3
1.5
°C/W
PD
W
Tj
Tstg
-55~+175
-55~+175
°C
≦
≦
Note : 1. Single Pulse Pw 350μs, Duty 2%.
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
ICBO
ICEO
150
-
-
-
-
-
-
100
1
V
nA
μA
mA
V
V
-
-
pF
IC=100μA, IE=0
-
-
-
-
VCB=150V, IE=0
VCE=150V, IB=0
VEB=5V, IC=0
IC=2A, IB=2mA
VCE=4V, IC=2A
VCE=4V, IC=1A
VCE=4V, IC=2A
VCB=10V, IE=0A, f=1MHz
IEBO
2
*VCE(sat)
*VBE(on)
*hFE1
*hFE2
Cob
1.2
2.2
-
2000
1000
-
-
-
-
200
*Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2%
Recommended Soldering Footprint
BTD2195SN3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
