Spec. No. : C848T3
Issued Date : 2004.07.01
Revised Date :
CYStech Electronics Corp.
Page No. : 2/4
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
BVCEO
BVEBO
ICBO
50
-
-
V
IC=50µA, IE=0
50
-
-
V
IC=1mA, IB=0
5
-
-
-
V
IE=50µA, IC=0
VCB=40V, IE=0
VEB=3V, IC=0
-
1
µA
µA
V
IEBO
-
-
-
0.25
-
1
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
*hFE3
fT
0.5
2
IC=2A, IB=200mA
IC=2A, IB=200mA
VCE=2V, IC=20mA
-
V
100
180
100
-
-
-
-
-
820
-
-
VCE=2V, IC=100mA
VCE=2V, IC=1A
-
-
90
45
-
-
MHz
pF
VCE=5V, IC=100mA, f =100MHz
VCB=10V, f=1MHz
Cob
-
*Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2%
Classification Of hFE 2
Rank
R
S
T
Range
180~390
270~560
390~820
Characteristic Curves
Grounded Emitter Output Characteristics
Grounded Emitter Output Characteristics
140
120
100
80
700
600
500
400
300
200
100
0
500uA
400uA
2.5mA
2mA
300uA
1.5mA
1mA
60
200uA
100uA
40
500uA
20
IB=0uA
IB=0uA
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
Collector To Emitter Voltage---VCE(V)
Collector To Emitter Voltage---VCE(V)
BTD2150AT3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
