CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Spec. No. : C848T3
Issued Date : 2004.07.01
Revised Date :
Page No. : 1/4
BTD2150AT3
Features
•
Low V
CE
(sat), V
CE
(sat)=0.25 V (typical), at I
C
/ I
B
= 2A / 200mA
•
Excellent current gain characteristics
•
Complementary to BTB1424AT3
Symbol
BTD2150AT3
Outline
TO-126
B:Base
C:Collector
E:Emitter
ECB
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation (T
A
=25℃)
Power Dissipation (T
C
=25℃)
Junction Temperature
Storage Temperature
Note : Pulse test, pulse width≤380µs, duty cycle≤2%.
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
D
Tj
Tstg
Limits
50
50
5
3
7
(Note)
1
10
150
-55~+150
Unit
V
V
V
A
W
°C
°C
BTD2150AT3
CYStek Product Specification