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BTD2150AM3 参数 Datasheet PDF下载

BTD2150AM3图片预览
型号: BTD2150AM3
PDF下载: 下载PDF文件 查看货源
内容描述: 低VCESAT NPN外延平面晶体管 [Low Vcesat NPN Epitaxial Planar Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 5 页 / 182 K
品牌: CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
 浏览型号BTD2150AM3的Datasheet PDF文件第1页浏览型号BTD2150AM3的Datasheet PDF文件第3页浏览型号BTD2150AM3的Datasheet PDF文件第4页浏览型号BTD2150AM3的Datasheet PDF文件第5页  
Spec. No. : C848M3-A  
Issued Date : 2002.08.18  
Revised Date : 2005.10.04  
Page No. : 2/5  
CYStech Electronics Corp.  
Characteristics (Ta=25°C)  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Test Conditions  
BVCBO  
BVCEO  
BVEBO  
ICBO  
80  
-
-
V
IC=50µA, IE=0  
50  
-
-
V
IC=1mA, IB=0  
6
-
-
-
-
V
IE=50µA, IC=0  
VCB=60V, IE=0  
VEB=5V, IC=0  
IC=1A, IB=50mA  
IC=2A, IB=0.2A  
IC=2A, IB=0.2A  
VCE=2V, IC=0.1A  
VCE=2V, IC=0.5A  
VCE=2V, IC=1A  
-
0.1  
0.1  
0.25  
0.5  
2
µA  
µA  
V
IEBO  
-
*VCE(sat)  
*VCE(sat)  
*VBE(sat)  
*hFE1  
*hFE2  
*hFE3  
fT  
-
-
0.1  
0.25  
-
V
-
V
120  
120  
100  
-
-
-
-
-
820  
-
-
-
-
90  
45  
-
-
MHz  
pF  
VCE=5V, IC=0.1A, f =100MHz  
VCB=10V, f=1MHz  
Cob  
-
*Pulse Test : Pulse Width 380µs, Duty Cycle2%  
Classification Of hFE 2  
Rank  
Q
R
S
T
180~390  
Range  
120~270  
270~560  
390~820  
Ordering Information  
Device  
Package  
Shipping  
Marking  
SOT-89  
BTD2210AM3  
1000 pcs / Tape & Reel  
CF  
(Pb-free)  
Characteristic Curves  
Grounded Emitter Output Characteristics  
Grounded Emitter Output Characteristics  
140  
120  
100  
80  
700  
600  
500  
400  
300  
200  
100  
0
500uA  
400uA  
2.5mA  
2mA  
300uA  
1.5mA  
1mA  
60  
200uA  
100uA  
40  
500uA  
20  
IB=0uA  
IB=0uA  
5
0
0
1
2
3
4
5
6
0
1
2
3
4
6
Collector To Emitter Voltage---VCE(V)  
Collector To Emitter Voltage---VCE(V)  
BTD2150AM3  
CYStek Product Specification