CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Spec. No. : C848M3-A
Issued Date : 2002.08.18
Revised Date : 2005.10.04
Page No. : 1/5
BTD2150AM3
Features
•
Low V
CE
(sat), V
CE
(sat)=0.1 V (typical), at I
C
/ I
B
= 1A / 50mA
•
Excellent current gain characteristics
•
Complementary to BTB1424AM3
•
Pb-free package
Symbol
BTD2150AM3
Outline
SOT-89
B：Base
C：Collector
E：Emitter
B C E
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pd
Tj
Tstg
Limits
80
50
6
3
0.6
1
2
150
-55~+150
Unit
V
V
V
A
*1
*2
W
°C
°C
Note : *1 Printed circuit board, 1.7mm thick, collector copper plating 10mm*10mm.
*2 When mounted on a 40*40*0.7mm ceramic board.
BTD2150AM3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
