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BTD2150A3 参数 Datasheet PDF下载

BTD2150A3图片预览
型号: BTD2150A3
PDF下载: 下载PDF文件 查看货源
内容描述: 低VCESAT NPN外延平面晶体管 [Low Vcesat NPN Epitaxial Planar Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 5 页 / 170 K
品牌: CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
 浏览型号BTD2150A3的Datasheet PDF文件第1页浏览型号BTD2150A3的Datasheet PDF文件第2页浏览型号BTD2150A3的Datasheet PDF文件第4页浏览型号BTD2150A3的Datasheet PDF文件第5页  
Spec. No. : C848A3  
Issued Date : 2005.02.04  
Revised Date :2005.06.03  
Page No. : 3/5  
CYStech Electronics Corp.  
Grounded Emitter Output Characteristics  
Grounded Emitter Output Characteristics  
2500  
2000  
1500  
1000  
500  
3500  
3000  
2500  
2000  
1500  
1000  
500  
25mA  
20mA  
10mA  
8mA  
15mA  
10mA  
6mA  
4mA  
5mA  
2mA  
IB=0mA  
IB=0mA  
0
0
0
1
2
3
4
5
6
0
1
1
1
2
3
4
5
6
Collector To Emitter Voltage---VCE(V)  
Collector To Emitter Voltage---VCE(V)  
Current gain vs Collector current  
Saturation voltage vs Collector current  
1000  
100  
10  
1000  
100  
10  
VCE(sat)  
IC=40IB  
VCE=5V  
VCE=2V  
VCE=1V  
IC=10IB  
IC=20IB  
100  
1
1
10  
1000  
10000  
10  
100  
Collector current---IC(mA)  
1000  
10000  
Collector current---IC(mA)  
Saturation votlage vs Collector current  
Power Derating Curve  
800  
700  
600  
500  
400  
300  
200  
100  
0
10000  
1000  
100  
VBE(sat)@IC=10IB  
0
50  
100  
150  
200  
10  
100  
1000  
10000  
Collector current---IC(mA)  
Ambient Temperature --- Ta(℃ )  
BTD2150A3  
CYStek Product Specification