Spec. No. : C848A3
Issued Date : 2005.02.04
Revised Date :2005.06.03
Page No. : 2/5
CYStech Electronics Corp.
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
BVCEO
BVEBO
ICBO
80
-
-
V
IC=50µA, IE=0
50
-
-
V
IC=1mA, IB=0
6
-
-
-
-
V
IE=50µA, IC=0
VCB=60V, IE=0
VEB=5V, IC=0
-
100
100
0.25
0.5
1.5
-
nA
nA
V
IEBO
-
*VCE(sat)
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
*hFE3
fT
-
-
0.1
0.25
-
IC=1A, IB=50mA
IC=2A, IB=100mA
IC=2A, IB=200mA
V
-
V
180
180
150
-
-
-
VCE=2V, IC=100mA
VCE=2V, IC=500mA
VCE=2V, IC=1A
-
820
-
-
-
-
-
-
90
45
MHz
pF
VCE=5V, IC=100mA, f=100MHz
Cob
-
VCB=10V, f=1MHz
*Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2%
Classification Of hFE2
Rank
R
S
T
Range
180~290
270~560
390~820
Characteristic Curves
Grounded Emitter Output Characteristics
Grounded Emitter Output Characteristics
140
120
100
80
700
600
500
400
300
200
100
0
500uA
400uA
2.5mA
2mA
300uA
1.5mA
1mA
60
200uA
100uA
40
500uA
20
IB=0uA
IB=0uA
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
Collector To Emitter Voltage---VCE(V)
Collector To Emitter Voltage---VCE(V)
BTD2150A3
CYStek Product Specification