Spec. No. : C822FP
Issued Date : 2005.07.29
Revised Date :
CYStech Electronics Corp.
Page No. : 2/ 5
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-Base Voltage
VCBO
VCEO
VEBO
IC
80
60
6
V
V
V
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
3
A
A
ICP
6
(Note 1)
IB
0.5
2
Power Dissipation @ TA=25℃
Power Dissipation @ TC=25℃
PD
W
PD
25
62.5
5
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Insulation Withstand Voltage (RMS) from All
Three Leads to External Heatsink
Junction Temperature
RθJA
RθJC
°C/W
°C/W
Visol
1000
150
-55~+150
V
Tj
Tstg
°C
°C
Storage Temperature
≦
≦
Note : 1. Single Pulse , Pw 380µs,Duty 2%.
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
*BVCEO
BVEBO
ICBO
80
-
-
V
IC=10µA, IE=0
60
-
-
V
IC=1mA, IB=0
6
-
-
-
-
V
IC=10µA, IC=0
-
1
µA
µA
mV
mV
V
VCB=80V, IE=0
IEBO
-
1
VEB=4V, IC=0
*VCE(sat)
*VCE(sat)
1
2
-
150
250
1
220
350
1.2
1
IC=1A, IB=50mA
IC=2A, IB=200mA
IC=2A, IB=100mA
VCE=2V, IC=500mA
VCE=5V, IC=500mA
VCE=5V, IC=3A
-
-
*VBE(sat)
*VBE(on)
*hFE 1
*hFE 2
fT
-
-
V
120
60
-
-
560
-
-
-
-
-
-
100
15
MHz
pF
VCE=5V, IC=500mA,f=5MHz
VCB=10V, f=1MHz
Cob
-
*Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2%
Classification of hFE 1
Rank
Q
R
S
Range
120~270
180~390
270~560
BTD2012FP
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
