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BTD2012FP 参数 Datasheet PDF下载

BTD2012FP图片预览
型号: BTD2012FP
PDF下载: 下载PDF文件 查看货源
内容描述: 低VCESAT NPN外延平面晶体管 [Low Vcesat NPN Epitaxial Planar Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 5 页 / 176 K
品牌: CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
 浏览型号BTD2012FP的Datasheet PDF文件第1页浏览型号BTD2012FP的Datasheet PDF文件第3页浏览型号BTD2012FP的Datasheet PDF文件第4页浏览型号BTD2012FP的Datasheet PDF文件第5页  
Spec. No. : C822FP  
Issued Date : 2005.07.29  
Revised Date :  
CYStech Electronics Corp.  
Page No. : 2/ 5  
Absolute Maximum Ratings (Ta=25°C)  
Parameter  
Symbol  
Limits  
Unit  
Collector-Base Voltage  
VCBO  
VCEO  
VEBO  
IC  
80  
60  
6
V
V
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current (DC)  
Collector Current (Pulse)  
Base Current  
3
A
A
ICP  
6
(Note 1)  
IB  
0.5  
2
Power Dissipation @ TA=25℃  
Power Dissipation @ TC=25℃  
PD  
W
PD  
25  
62.5  
5
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Case  
Insulation Withstand Voltage (RMS) from All  
Three Leads to External Heatsink  
Junction Temperature  
RθJA  
RθJC  
°C/W  
°C/W  
Visol  
1000  
150  
-55~+150  
V
Tj  
Tstg  
°C  
°C  
Storage Temperature  
Note : 1. Single Pulse , Pw 380µs,Duty 2%.  
Characteristics (Ta=25°C)  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Test Conditions  
BVCBO  
*BVCEO  
BVEBO  
ICBO  
80  
-
-
V
IC=10µA, IE=0  
60  
-
-
V
IC=1mA, IB=0  
6
-
-
-
-
V
IC=10µA, IC=0  
-
1
µA  
µA  
mV  
mV  
V
VCB=80V, IE=0  
IEBO  
-
1
VEB=4V, IC=0  
*VCE(sat)  
*VCE(sat)  
1
2
-
150  
250  
1
220  
350  
1.2  
1
IC=1A, IB=50mA  
IC=2A, IB=200mA  
IC=2A, IB=100mA  
VCE=2V, IC=500mA  
VCE=5V, IC=500mA  
VCE=5V, IC=3A  
-
-
*VBE(sat)  
*VBE(on)  
*hFE 1  
*hFE 2  
fT  
-
-
V
120  
60  
-
-
560  
-
-
-
-
-
-
100  
15  
MHz  
pF  
VCE=5V, IC=500mA,f=5MHz  
VCB=10V, f=1MHz  
Cob  
-
*Pulse Test : Pulse Width 380µs, Duty Cycle2%  
Classification of hFE 1  
Rank  
Q
R
S
Range  
120~270  
180~390  
270~560  
BTD2012FP  
CYStek Product Specification