Spec. No. : C819J3
Issued Date : 2004.12.18
Revised Date :
CYStech Electronics Corp.
Page No. : 2/5
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-Base Voltage
VCBO
VCES
VCEO
VEBO
IC
80
V
V
V
V
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
80
60
6
Collector Current (DC)
Collector Current (Pulse)
Base Current
5
A
A
ICP
7.5 (Note 1)
IB
1.2
0.8
15
Power Dissipation @ TA=25℃
PD
W
Power Dissipation @ TC=25℃
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Junction Temperature
PD
RθJA
RθJC
Tj
156
8.33
150
°C/W
°C/W
°C
Storage Temperature
Tstg
-55~+150
°C
≦
≦
Note : 1. Single Pulse , Pw 380µs,Duty 2%.
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
BVCES
*BVCEO
BVEBO
ICBO
80
-
-
V
IC=10µA, IE=0
80
-
-
V
IC=100µA, RBE=0
IC=1mA, IB=0
60
-
-
V
V
6
-
-
1
IC=10µA, IC=0
-
-
µA
µA
mV
mV
V
VCB=80V, IE=0
IEBO
-
-
1
VEB=4V, IC=0
*VCE(sat)
*VCE(sat)
1
-
110
200
0.89
-
135
240
1.2
560
-
IC=1A, IB=50mA
IC=2A, IB=100mA
IC=2A, IB=100mA
VCE=2V, IC=500mA
VCE=10V, IC=500mA
VCB=10V, f=1MHz
2
-
*VBE(sat)
*hFE
fT
-
200
-
-
-
-
-
-
400
15
35
300
20
MHz
pF
ns
Cob
ton
tstg
-
-
VCC=25V, IC=10IB1=-10IB2=1A,
-
ns
ns
Ω
RL=25
tf
-
*Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2%
BTC5706J3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
