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BTB857T3-0-UC-G 参数 Datasheet PDF下载

BTB857T3-0-UC-G图片预览
型号: BTB857T3-0-UC-G
PDF下载: 下载PDF文件 查看货源
内容描述: [Low Vcesat PNP Epitaxial Planar Transistor]
分类和应用:
文件页数/大小: 5 页 / 243 K
品牌: CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
 浏览型号BTB857T3-0-UC-G的Datasheet PDF文件第1页浏览型号BTB857T3-0-UC-G的Datasheet PDF文件第2页浏览型号BTB857T3-0-UC-G的Datasheet PDF文件第4页浏览型号BTB857T3-0-UC-G的Datasheet PDF文件第5页  
Spec. No. : C811T3  
Issued Date : 2017.01.18  
Revised Date :  
CYStech Electronics Corp.  
Page No. : 3/5  
Typical Characteristics  
Current Gain vs Collector Current  
Saturation Voltage vs Collector Current  
1000  
10000  
1000  
100  
10  
VCE(SAT)  
IC=20IB  
IC=50IB  
VCE=5V  
VCE=2V  
100  
IC=10IB  
VCE=1V  
1
10  
1
10  
100  
1000  
10000  
1
1
0
10  
100  
1000  
10000  
10000  
200  
Collector Current---IC(mA)  
Collector Current---IC(mA)  
Saturation Voltage vs Collector Current  
On Vottage vs Collector Current  
10000  
10000  
1000  
100  
VBE(ON)@VCE=5V  
VBE(SAT) @ IC=10IB  
1000  
100  
10  
100  
1000  
1
10  
100  
1000  
10000  
Collector Current---IC(mA)  
Collector Current---IC(mA)  
Power Derating Curve  
Power Derating Curve  
1.6  
1.4  
1.2  
1
25  
20  
15  
10  
5
0.8  
0.6  
0.4  
0.2  
0
0
0
50  
100  
150  
200  
50  
100  
150  
Ambient Temperature---TA(℃)  
Case Temperature---TC(℃)  
BTB857T3  
CYStek Product Specification