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BTB1412J3_09 参数 Datasheet PDF下载

BTB1412J3_09图片预览
型号: BTB1412J3_09
PDF下载: 下载PDF文件 查看货源
内容描述: 低VCESAT PNP外延平面晶体管 [Low Vcesat PNP Epitaxial Planar Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 7 页 / 245 K
品牌: CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
 浏览型号BTB1412J3_09的Datasheet PDF文件第1页浏览型号BTB1412J3_09的Datasheet PDF文件第2页浏览型号BTB1412J3_09的Datasheet PDF文件第4页浏览型号BTB1412J3_09的Datasheet PDF文件第5页浏览型号BTB1412J3_09的Datasheet PDF文件第6页浏览型号BTB1412J3_09的Datasheet PDF文件第7页  
Spec. No. : C816J3  
Issued Date : 2003.05.15  
Revised Date : 2009.02.04  
Page No. : 3/7  
CYStech Electronics Corp.  
Characteristic Curves  
Current Gain vs Collector Current  
Saturation Voltage vs Collector Current  
1000  
100  
10  
10000  
1000  
100  
VCESAT  
VCE=2V  
IC=100IB  
IC=40IB IC=50IB  
VCE=1V  
IC=30IB  
10  
1
1
0
10  
100  
1000  
10000  
10000  
6
1
10  
100  
1000  
10000  
Collector Current---IC(mA)  
Collector Current---IC(mA)  
Saturation Voltage vs Collector Current  
Output Characteristics  
10000  
1000  
100  
5
4.5  
4
IB=20mA  
VBESAT@IC=10IB  
3.5  
3
IB=10mA  
2.5  
2
IB=6mA  
1.5  
1
IB=4mA  
IB=2mA  
0.5  
0
IB=0  
10  
100  
1000  
0
2
4
Collector-to-Emitter Voltage---VCE(V)  
6
Collector Current---IC(mA)  
Power Derating Curve  
Output Characteristics  
9
8
7
6
5
4
3
2
1
0
12  
10  
8
IB=50mA  
IB=25mA  
IB=20mA  
6
IB=15mA  
IB=10mA  
4
2
IB=5mA  
IB=0  
0
0
50  
100  
150  
200  
1
2
3
4
5
Case Temperature---TC(℃)  
Collector-to-Emitter Voltage---VCE(V)  
BTB1412J3  
CYStek Product Specification