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BTB1184J3S 参数 Datasheet PDF下载

BTB1184J3S图片预览
型号: BTB1184J3S
PDF下载: 下载PDF文件 查看货源
内容描述: [Low Vcesat PNP Epitaxial Planar Transistor]
分类和应用:
文件页数/大小: 7 页 / 327 K
品牌: CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
 浏览型号BTB1184J3S的Datasheet PDF文件第1页浏览型号BTB1184J3S的Datasheet PDF文件第2页浏览型号BTB1184J3S的Datasheet PDF文件第3页浏览型号BTB1184J3S的Datasheet PDF文件第4页浏览型号BTB1184J3S的Datasheet PDF文件第5页浏览型号BTB1184J3S的Datasheet PDF文件第7页  
Spec. No. : C817J3  
Issued Date : 2015.02.25  
Revised Date :  
CYStech Electronics Corp.  
Page No. : 6/7  
Recommended wave soldering condition  
Product  
Peak Temperature  
Soldering Time  
5 +1/-1 seconds  
Pb-free devices  
260 +0/-5 °C  
Recommended temperature profile for IR reflow  
Profile feature  
Average ramp-up rate  
(Tsmax to Tp)  
Sn-Pb eutectic Assembly  
Pb-free Assembly  
3°C/second max.  
3°C/second max.  
Preheat  
Temperature Min(TS min)  
Temperature Max(TS max)  
Time(ts min to ts max)  
100°C  
150°C  
60-120 seconds  
150°C  
200°C  
60-180 seconds  
Time maintained above:  
Temperature (TL)  
Time (tL)  
183°C  
60-150 seconds  
217°C  
60-150 seconds  
Peak Temperature(TP)  
240 +0/-5 °C  
260 +0/-5 °C  
Time within 5°C of actual peak  
temperature(tp)  
10-30 seconds  
20-40 seconds  
Ramp down rate  
6°C/second max.  
6°C/second max.  
6 minutes max.  
8 minutes max.  
Time 25 °C to peak temperature  
Note : All temperatures refer to topside of the package, measured on the package body surface.  
BTB1184J3S  
CYStek Product Specification  
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