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BTB1184J3S 参数 Datasheet PDF下载

BTB1184J3S图片预览
型号: BTB1184J3S
PDF下载: 下载PDF文件 查看货源
内容描述: [Low Vcesat PNP Epitaxial Planar Transistor]
分类和应用:
文件页数/大小: 7 页 / 327 K
品牌: CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
 浏览型号BTB1184J3S的Datasheet PDF文件第1页浏览型号BTB1184J3S的Datasheet PDF文件第3页浏览型号BTB1184J3S的Datasheet PDF文件第4页浏览型号BTB1184J3S的Datasheet PDF文件第5页浏览型号BTB1184J3S的Datasheet PDF文件第6页浏览型号BTB1184J3S的Datasheet PDF文件第7页  
Spec. No. : C817J3  
Issued Date : 2015.02.25  
Revised Date :  
CYStech Electronics Corp.  
Page No. : 2/7  
Absolute Maximum Ratings (Ta=25°C)  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Limits  
-60  
-50  
-6  
Unit  
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current(DC)  
Collector Current(Pulse)  
Power Dissipation (TA=25)  
V
-3  
-7  
1
15  
A
ICP  
*1  
*2  
Pd(TA=25)  
Pd(TC=25)  
W
Power Dissipation (TC=25)  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Case  
Operating Junction and Storage Temperature Range  
RθJA  
RθJC  
Tj,Tstg  
125  
8.33 *2  
-55~+150  
°C/W  
°C  
.
Note : *1 Single Pulse Pw=10ms  
*2 . Printed circuit board, 1.7mm thick, collector copper plating 10mm*10mm or larger.  
Characteristics (Ta=25°C)  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Test Conditions  
BVCBO  
BVCEO  
BVEBO  
ICBO  
-60  
-50  
-6  
-
-
-
-
-
-
-
-
-
-
-
V
V
V
μA  
μA  
V
IC=-50μA, IE=0  
IC=-1mA, IB=0  
IE=-50μA, IC=0  
VCB=-40V, IE=0  
VEB=-4V, IC=0  
IC=-2A, IB=-0.1A  
IC=-2A, IB=-0.1A  
IC=-2A, IB=-0.1A  
VCE=-2V, IC=-20mA  
VCE=-3V, IC=-500mA  
VCE=-2V, IC=-1A  
VCE=-5V, IC=-0.1A, f=100MHz  
VCB=-10V, f=1MHz  
-1  
-1  
-0.5  
250  
-1.2  
-
560  
-
-
IEBO  
-
-0.26  
130  
-0.96  
-
-
-
80  
35  
*VCE(sat)  
*RCE(sat)  
*VBE(sat)  
*hFE1  
*hFE2  
*hFE3  
fT  
Ω
m
-
V
-
-
200  
270  
80  
-
-
MHz  
pF  
Cob  
-
-
*Pulse Test : Pulse Width 380μs, Duty Cycle2%  
Classification Of hFE2  
Rank  
S
Range  
270~560  
BTB1184J3S  
CYStek Product Specification  
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