Spec. No. : C465S6R
Issued Date : 2012.12.25
Revised Date :
CYStech Electronics Corp.
Page No. : 4/ 8
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
1.6
1.4
1.2
1
100
10
1
μ
ID=-250 A
Ciss
C
oss
0.8
0.6
0.4
Crss
-60 -40 -20
0
20 40 60 80 100 120 140 160
0.1
1
10
100
-VDS, Drain-Source Voltage(V)
Tj, Junction Temperature(°C)
Single Pulse Power Rating, Junction to Ambient
(Note on page 1)
Gate Charge Characteristics
10
10
VDS=-40V
ID=-170mA
TJ(MAX)=150°C
TA=25°C
θJA
8
6
4
2
0
8
6
4
2
0
R
=415°C/W
0
0.6
1.2
1.8
2.4
3
3.6
0.001
0.01
0.1
1
10
100
Pulse Width(s)
Qg, Total Gate Charge(nC)
Maximum Safe Operating Area
Maximum Drain Current vs JunctionTemperature
1
0.1
0.2
0.18
0.16
0.14
0.12
0.1
μ
100 s
RDS(ON)
Limited
1ms
10ms
100ms
0.08
0.06
0.04
0.02
0
1s
0.01
TA=25°C, Tj=150°C,
θ
GS=-5V, R JA=415°C/W
DC
V
Single Pulse
θJA
TA=25°C, VGS=-5V, R =415°C/W
0.001
0.01
0.1
1
10
100
25
50
75
100
125
150
175
-VDS, Drain-Source Voltage(V)
Tj, Junction Temperature(°C)
BSS84S6R
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
