Spec. No. : C465S6R
Issued Date : 2012.12.25
Revised Date :
CYStech Electronics Corp.
Page No. : 3/ 8
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
1.2
1
600
500
400
300
200
100
0
-VGS=5V
μ
ID=-250 A,
V
GS=0V
-VGS=4.5V
-VGS=4V
-VGS=3.5V
-VGS=3V
0.8
0.6
-VGS=2.5V
-VGS=2V
-75 -50 -25
0
25 50 75 100 125 150 175
0
1
2
3
4
5
6
7
8
9
10
-VDS, Drain-Source Voltage(V)
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
12
11
10
9
1.2
VGS=0V
Tj=25°C
1
0.8
0.6
0.4
0.2
-VGS=3V
8
Tj=150°C
-VGS=5V
7
6
5
-VGS=10V
4
0
0.1
0.2
0.3
0.4
0.5
0.001
0.01
0.1
1
D
-IDR, Reverse Drain Current (A)
-I , Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
2
1.8
1.6
1.4
1.2
1
20
18
16
14
12
10
8
VGS=-5V, ID=-100mA
ID=-100mA
ID=-30mA
6
0.8
0.6
0.4
4
VGS=-10V, ID=-100mA
2
0
-60
-20
20
60
100
140
180
0
2
4
6
8
10
-VGS, Gate-Source Voltage(V)
Tj, Junction Temperature(°C)
BSS84S6R
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
