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7KL0641DAHI02 参数 Datasheet PDF下载

7KL0641DAHI02图片预览
型号: 7KL0641DAHI02
PDF下载: 下载PDF文件 查看货源
内容描述: [HyperRAM™ Self-Refresh DRAM 3.0V/1.8V 64 Mb (8 MB)]
分类和应用: 动态存储器
文件页数/大小: 29 页 / 770 K
品牌: CYPRESS [ CYPRESS ]
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ADVANCE  
S27KL0641, S27KS0641  
Each register is written with a separate single word write transaction. Register write transactions have zero latency, the single word  
of data immediately follows the Command-Address. RWDS is not driven by the host during the write because RWDS is always  
driven by the memory during the CA cycles to indicate whether a memory array refresh is in progress. Because a register space  
write goes directly to a register, rather than the memory array, there is no initial write latency, related to an array refresh that may be  
in progress. In a register write, RWDS is also not used as a data mask because both bytes of a register are always written and never  
masked.  
Reserved register fields must be written with their default value. Writing reserved fields with other than default values may produce  
undefined results.  
Reading of a register is accomplished with a single 16 bit read transaction with CA[46]=1 to select register space. If more than one  
word is read, the same register value is repeated in each word read. The CA[45] burst type is “don’t care” because only a single  
register value is read. The contents of the register is returned in the same manner as reading array data, with one or two latency  
counts, based on the state of RWDS during the Command-Address period. The latency count is defined in the Configuration  
Register 0 Read Latency field (CR0[7:4]).  
5.2.1  
Configuration Register 0  
Configuration Register 0 (CR0) is used to define the power mode and access protocol operating conditions for the HyperRAM  
device. Configurable characteristics include:  
Wrapped Burst Length (16, 32, 64, or 128-byte aligned and length data group)  
Wrapped Burst Type  
– Legacy wrap (sequential access with wrap around within a selected length and aligned group)  
– Hybrid wrap (Legacy wrap once then linear burst at start of the next sequential group)  
Initial Latency  
Variable Latency  
– Whether an array read or write transaction will use fixed or variable latency. If fixed latency is selected the memory will always  
indicate a refresh latency and delay the read data transfer accordingly. If variable latency is selected, latency for a refresh is  
only added when a refresh is required at the same time a new transaction is starting.  
Output Drive Strength  
Deep Power Down Mode  
Table 5.4 Configuration Register 0 Bit Assignments  
CR0 Bit  
Function  
Settings (Binary)  
1 - Normal operation (default)  
0 - Writing 0 to CR[15] causes the device to enter Deep Power Down  
15  
Deep Power Down Enable  
000 - 34 ohms (default)  
001 - 115 ohms  
010 - 67 ohms  
011 - 46 ohms  
100 - 34 ohms  
101 - 27 ohms  
110 - 22 ohms  
111 - 19 ohms  
14-12  
11-8  
Drive Strength  
Reserved  
1 - Reserved (default)  
Reserved for Future Use. When writing this register, these bits should be set  
to 1 for future compatibility.  
Document Number: 001-97964 Rev. *E  
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