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7C1019BV33-12 参数 Datasheet PDF下载

7C1019BV33-12图片预览
型号: 7C1019BV33-12
PDF下载: 下载PDF文件 查看货源
内容描述: 128K ×8静态RAM [128K x 8 Static RAM]
分类和应用:
文件页数/大小: 7 页 / 241 K
品牌: CYPRESS [ CYPRESS ]
 浏览型号7C1019BV33-12的Datasheet PDF文件第1页浏览型号7C1019BV33-12的Datasheet PDF文件第2页浏览型号7C1019BV33-12的Datasheet PDF文件第4页浏览型号7C1019BV33-12的Datasheet PDF文件第5页浏览型号7C1019BV33-12的Datasheet PDF文件第6页浏览型号7C1019BV33-12的Datasheet PDF文件第7页  
CY7C1019BV33  
AC Test Loads and Waveforms  
R1 480  
ALL INPUT PULSES  
90%  
10%  
R1 480  
3.3V  
3.3V  
3.0V  
GND  
90%  
10%  
OUTPUT  
OUTPUT  
R2  
255  
R2  
255  
30 pF  
5 pF  
3 ns  
3 ns  
INCLUDING  
JIG AND  
SCOPE  
INCLUDING  
JIG AND  
SCOPE  
(b)  
1019BV333  
(a)  
1019BV334  
THÉ  
VENIN EQUIVALENT  
Equivalent to:  
167  
1.73V  
OUTPUT  
Switching Characteristics[4] Over the Operating Range  
7C1019BV33-10  
7C1019BV33-12  
7C1019BV33-15  
Parameter  
Description  
Min.  
10  
3
Max.  
Min.  
Max.  
Min.  
Max.  
Unit  
READ CYCLE  
t
t
t
t
t
t
t
t
t
t
t
Read Cycle Time  
12  
15  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
RC  
Address to Data Valid  
Data Hold from Address Change  
CE LOW to Data Valid  
OE LOW to Data Valid  
OE LOW to Low Z  
10  
12  
15  
AA  
3
3
OHA  
ACE  
DOE  
LZOE  
HZOE  
LZCE  
HZCE  
PU  
10  
5
12  
6
15  
7
0
3
0
0
3
0
0
3
0
[5, 6]  
OE HIGH to High Z  
5
5
6
6
7
7
[6]  
CE LOW to Low Z  
[5, 6]  
CE HIGH to High Z  
CE LOW to Power-Up  
CE HIGH to Power-Down  
10  
12  
15  
PD  
[7, 8]  
WRITE CYCLE  
t
t
t
t
t
t
t
t
t
t
Write Cycle Time  
10  
8
12  
9
15  
10  
10  
0
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
WC  
CE LOW to Write End  
SCE  
AW  
Address Set-Up to Write End  
Address Hold from Write End  
Address Set-Up to Write Start  
WE Pulse Width  
7
8
0
0
HA  
0
0
0
SA  
7
8
10  
8
PWE  
SD  
Data Set-Up to Write End  
Data Hold from Write End  
5
6
0
0
0
HD  
[6]  
WE HIGH to Low Z  
3
3
3
LZWE  
HZWE  
[5, 6]  
WE LOW to High Z  
5
6
7
Notes:  
4. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified  
IOL/IOH and 30-pF load capacitance.  
5.  
tHZOE, tHZCE, and tHZWE are specified with a load capacitance of 5 pF as in part (b) of AC Test Loads. Transition is measured ±500 mV from steady-state voltage.  
6. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device.  
7. The internal write time of the memory is defined by the overlap of CELOW and WE LOW. CE and WEmust be LOW to initiate a write, and the transition of any of these  
signals can terminate the write. The input data set-up and hold timing should be referenced to the leading edge of the signal that terminates the write.  
8. The minimum write cycle time for Write Cycle no. 3 (WE controlled, OE LOW) is the sum of tHZWE and tSD  
.
3