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7C1019BV33-12 参数 Datasheet PDF下载

7C1019BV33-12图片预览
型号: 7C1019BV33-12
PDF下载: 下载PDF文件 查看货源
内容描述: 128K ×8静态RAM [128K x 8 Static RAM]
分类和应用:
文件页数/大小: 7 页 / 241 K
品牌: CYPRESS [ CYPRESS ]
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CY7C1019BV33  
Current into Outputs (LOW)......................................... 20 mA  
Maximum Ratings  
Static Discharge Voltage ........................................... >2001V  
(per MIL-STD-883, Method 3015)  
(Above which the useful life may be impaired. For user guide-  
lines, not tested.)  
Latch-Up Current..................................................... >200 mA  
Storage Temperature ................................. 65°C to +150°C  
Ambient Temperature with  
Power Applied............................................. 55°C to +125°C  
Operating Range  
Ambient  
Temperature  
[1]  
Supply Voltage on V to Relative GND .... 0.5V to +7.0V  
[2]  
CC  
Range  
V
CC  
DC Voltage Applied to Outputs  
in High Z State ....................................0.5V to V + 0.5V  
Commercial  
0°C to +70°C  
3.3V ± 10%  
[1]  
CC  
[1]  
DC Input Voltage .................................0.5V to V + 0.5V  
CC  
Electrical Characteristics Over the Operating Range  
7C1019BV33  
-10  
7C1019BV33  
-12  
7C1019BV33  
-15  
Parameter  
Description  
Test Conditions  
Min.  
Max.  
Min.  
Max.  
Min.  
Max.  
Unit  
V
Output HIGH Voltage  
V
= Min.,  
CC  
= 4.0 mA  
2.4  
2.4  
2.4  
V
OH  
OL  
IH  
I
OH  
V
V
V
Output LOW Voltage  
Input HIGH Voltage  
V
= Min.,  
0.4  
0.4  
0.4  
V
V
CC  
I
= 8.0 mA  
OL  
2.2  
V
2.2  
V
2.2  
V
CC  
CC  
CC  
+ 0.3  
0.8  
+1  
+ 0.3  
0.8  
+1  
+ 0.3  
0.8  
+1  
[1]  
Input LOW Voltage  
0.3  
1  
0.3  
1  
0.3  
1  
V
IL  
I
I
Input Load Current  
GND < V < V  
CC  
µA  
µA  
IX  
I
Output Leakage  
Current  
GND < V < V ,  
CC  
Output Disabled  
5  
+5  
5  
+5  
5  
+5  
OZ  
I
I
I
I
V
Operating  
V
= Max.,  
= 0 mA,  
175  
20  
160  
20  
145  
20  
mA  
mA  
mA  
CC  
CC  
CC  
Supply Current  
I
OUT  
f = f  
= 1/t  
MAX  
RC  
Automatic CE  
Power-Down Current  
TTL Inputs  
Max. V , CE > V  
CC IH  
V
V
SB1  
SB2  
> V or  
IN  
IN  
IH  
< V , f = f  
IL  
MAX  
Automatic CE  
Max. V  
,
5
5
5
CC  
Power-Down Current CE > V 0.3V,  
CC  
L
0.5  
0.5  
CMOS Inputs  
V
> V 0.3V,  
IN CC  
or V < 0.3V, f = 0  
IN  
Capacitance[3]  
Parameter  
Description  
Test Conditions  
T = 25°C, f = 1 MHz,  
Max.  
Unit  
C
C
Input Capacitance  
Output Capacitance  
6
8
pF  
pF  
IN  
A
V
= 5.0V  
CC  
OUT  
Notes:  
1.  
V
IL (min.) = 2.0V for pulse durations of less than 20 ns.  
2. TA is the Instant Oncase temperature.  
3. Tested initially and after any design or process changes that may affect these parameters.  
2