Typical Performance
300
250
200
150
100
50
Conditions:
IDS = 20 A
VDD = 700 V
RG(ext) = 2.5 Ω
VGS = -4V/+15 V
FWD = C3M0120100J
L = 156 μH
Conditions:
TJ = 25 °C
VDD = 700 V
IDS = 15 A
VGS = -4V/+15 V
FWD = C3M0120100J
L = 156 μH
250
ETotal
200
150
100
50
ETotal
EOn
EOn
EOff
EOff
0
0
0
5
10
15
20
25
0
25
50
75
100
125
150
175
External Gate Resistor RG(ext) (Ohms)
Junction Temperature, TJ (°C)
Figure 26. Clamped Inductive Switching Energy vs.
Temperature
Figure 25. Clamped Inductive Switching Energy vs. RG(ext)
35
Conditions:
TJ = 25 °C
VDD = 700 V
IDS = 15 A
VGS = -4V/+15 V
FWD = C3M0120100J
L = 156 μH
30
25
20
15
10
5
td(off)
td(on)
tr
tf
0
0
5
10
15
20
25
External Gate Resistor RG(ext) (Ohms)
Figure 27. Switching Times vs. RG(ext)
Figureꢀ28.ꢀSwitchingꢀTimesꢀDefinition
7
C3M0120100J Rev. -, 04-2017
CREE [ CREE, INC ]
