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C3M0120100J 参数 Datasheet PDF下载

C3M0120100J图片预览
型号: C3M0120100J
PDF下载: 下载PDF文件 查看货源
内容描述: [Silicon Carbide Power MOSFET C3M MOSFET Technology]
分类和应用:
文件页数/大小: 10 页 / 1331 K
品牌: CREE [ CREE, INC ]
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Typical Performance  
25  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
Conditions:  
TJ ≤ 150 °C  
Conditions:  
TJ ≤ 150 °C  
20  
15  
10  
5
0
-55  
-30  
-5  
20  
45  
70  
95  
120  
145  
-55  
-30  
-5  
20  
45  
70  
95  
120  
145  
Case Temperature, TC (°C)  
Case Temperature, TC (°C)  
Figure 19. Continuous Drain Current Derating vs.  
Case Temperature  
Figure 20. Maximum Power Dissipation Derating vs.  
Case Temperature  
1  
10 µs  
0.5  
0.3  
Limited by RDS On  
100 µs  
10.00  
1 ms  
100 ms  
0.1  
1.00  
0.10  
0.01  
0.05  
100E-3  
0.02  
Conditions:  
TC = 25 °C  
D = 0,  
SinglePulse  
0.01  
Parameter: tp  
10E-3  
1E-6  
0.1  
1
10  
100  
1000  
10E-6  
100E-6  
1E-3  
10E-3  
100E-3  
1  
Drain-Source Voltage, VDS (V)  
Time, t (s)  
p  
Figure 21. Transient Thermal Impedance  
(Junction - Case)  
Figure 22. Safe Operating Area  
150  
125  
100  
75  
250  
Conditions:  
TJ = 25 °C  
VDD = 500 V  
RG(ext) = 2.5 Ω  
VGS = -4V/+15 V  
FWD = C3M0120100J  
L = 156 μH  
Conditions:  
TJ = 25 °C  
VDD = 700 V  
RG(ext) = 2.5 Ω  
VGS = -4V/+15 V  
FWD = C3M0120100J  
L = 156 μH  
200  
150  
100  
50  
ETotal  
ETotal  
EOn  
EOn  
50  
25  
EOff  
EOff  
0
0
0
5
10  
15  
20  
25  
0
5
10  
15  
20  
25  
Drain to Source Current, IDS (A)  
Drain to Source Current, IDS (A)  
Figure 23. Clamped Inductive Switching Energy vs.  
Drain Current (VDD = 500V)  
Figure 24. Clamped Inductive Switching Energy vs.  
Drain Current (VDD = 700V)  
6
C3M0120100J Rev. -, 04-2017