Typical Performance
600
400
350
300
250
200
150
100
50
Conditions:
DS = 20 A
DD = 700 V
G(ext) = 2.5 Ω
GS = -4V/+15 V
FWD = C3M0065100K
L = 130 μH
Conditions:
TJ = 25 °C
I
V
R
V
V
DD = 700 V
DS = 20 A
GS = -4V/+15 V
500
400
300
200
100
0
I
V
ETotal
FWD = C3M0065100K
L = 130 μH
ETotal
EOn
EOn
EOff
EOff
0
0
5
10
15
20
25
0
25
50
75
100
125
150
175
External Gate Resistor RG(ext) (Ohms)
Junction Temperature, TJ (°C)
Figure 26. Clamped Inductive Switching Energy vs.
Temperature
Figure 25. Clamped Inductive Switching Energy vs. RG(ext)
40
Conditions:
TJ = 25 °C
td(off)
V
I
V
DD = 700 V
DS = 20 A
GS = -4V/+15 V
30
20
10
0
td(on)
FWD = C3M0065100K
L = 130 μH
tr
tf
0
5
10
15
20
25
External Gate Resistor RG(ext) (Ohms)
Figure 27. Switching Times vs. RG(ext)
Figureꢀ28.ꢀSwitchingꢀTimesꢀDefinition
35
Conditons:
DD = 50 V
V
30
25
20
15
10
5
0
0
20
40
60
80
100
Time in Avalanche TAV (us)
Figure 29. Single Avalanche SOA curve
7
C3M0065100K Rev. -, 09-2016
CREE [ CREE, INC ]
