Typical Performance
40
35
30
25
20
15
10
5
120
100
80
60
40
20
0
Conditions:
TJ ≤ 150 °C
Conditions:
TJ ≤ 150 °C
0
-50
-25
0
25
50
75
100
125
150
-50
-25
0
25
50
75
100
125
150
Case Temperature, TC (°C)
Case Temperature, TC (°C)
Figure 19. Continuous Drain Current Derating vs.
Case Temperature
Figure 20. Maximum Power Dissipation Derating vs.
Case Temperature
100.00
1
10 µs
Limited by RDS On
100 µs
10.00
1 ms
100 ms
0.5
0.3
1.00
0.10
0.01
100E-3
0.1
0.05
Conditions:
TC = 25 °C
D = 0,
0.02
0.01
SinglePulse
Parameter:tp
10E-3
0.1
1
10
100
1000
1E-6
10E-6
100E-6
1E-3
10E-3
100E-3
1
Drain-Source Voltage, VDS (V)
Time, tp (s)
Figure 21. Transient Thermal Impedance
(Junction - Case)
Figure 22. Safe Operating Area
300
250
200
150
100
50
500
Conditions:
TJ = 25 °C
DD = 500 V
G(ext) = 2.5 Ω
GS = -4V/+15 V
FWD = C3M0065100K
L = 130 μH
Conditions:
TJ = 25 °C
V
R
V
V
DD = 700 V
RG(ext) = 2.5 Ω
400
300
200
100
0
V
GS = -4V/+15 V
ETotal
FWD = C3M0065100K
L = 130 μH
ETotal
EOn
EOn
EOff
EOff
0
0
10
20
30
40
50
0
10
20
30
40
50
Drain to Source Current, IDS (A)
Drain to Source Current, IDS (A)
Figure 23. Clamped Inductive Switching Energy vs.
Drain Current (VDD = 500V)
Figure 24. Clamped Inductive Switching Energy vs.
Drain Current (VDD = 700V)
6
C3M0065100K Rev. -, 09-2016