Typical Performance
1.6
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
Conditions:
TJ = 25 °C
VDD = 600 V
IDS = 35 A
VGS = -4V/+15 V
FWD = C3M0030090K
L = 57.6 μH
Conditions:
IDS = 35 A
VDD = 600 V
RG(ext) = 2.5 Ω
VGS = -4V/+15 V
FWD = C3M0030090K
(- - -)FWD =C4D20120
L = 57.6 μH
1.4
1.2
ETotal
1.0
0.8
0.6
0.4
0.2
0.0
ETotal
EOn
EOn
ETotal
EOn
EOff
EOff
EOff
0
5
10
15
20
25
0
25
50
75
100
125
150
175
External Gate Resistor RG(ext) (Ohms)
Junction Temperature, TJ (°C)
Figure 26. Clamped Inductive Switching Energy vs.
Temperature
Figure 25. Clamped Inductive Switching Energy vs. RG(ext)
100
Conditions:
TJ = 25 °C
VDD = 600 V
IDS = 35 A
VGS = -4V/+15 V
FWD = C3M0030090K
L = 57.6 μH
90
80
70
60
50
40
30
20
10
0
td(off)
td(on)
tr
tf
0
5
10
15
20
25
External Gate Resistor RG(ext) (Ohms)
Figure 27. Switching Times vs. RG(ext)
Figureꢀ28.ꢀSwitchingꢀTimesꢀDefinition
7
C3M0030090K Rev. A, 05-2018
CREE [ CREE, INC ]
