Typical Performance
110
-10
-8
-6
-4
-2
0
Conditions:
0
VDS = 20 V
tp < 200 µs
100
90
80
70
60
50
40
30
20
10
0
-20
VGS = -4 V
-40
VGS = 0 V
-60
TJ = 25 °C
-80
TJ = 150 °C
VGS = -2 V
-100
-120
-140
-160
-180
-200
TJ = -55 °C
Conditions:
TJ = -55°C
tp < 200 µs
0
2
4
6
8
10
12
14
Drain-Source Voltage VDS (V)
Gate-Source Voltage, VGS (V)
Figure 7. Transfer Characteristic for
Various Junction Temperatures
Figure 8. Body Diode Characteristic at -55 ºC
-10
-8
-6
-4
-2
0
-10
-8
-6
-4
-2
0
0
0
-20
-20
-40
-60
-80
VGS = -4 V
VGS = -4 V
-40
VGS = 0 V
VGS = 0 V
-60
-80
VGS = -2 V
VGS = -2 V
-100
-120
-140
-160
-180
-200
-100
-120
-140
-160
-180
-200
Conditions:
TJ = 25°C
tp < 200 µs
Conditions:
TJ = 150°C
tp < 200 µs
Drain-Source Voltage VDS (V)
Drain-Source Voltage VDS (V)
Figure 9. Body Diode Characteristic at 25 ºC
Figure 10. Body Diode Characteristic at 150 ºC
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
16
Conditons
VGS = VDS
IDS = 11 mA
Conditions:
IDS = 35 A
IGS = 50 mA
VDS = 600 V
TJ = 25 °C
12
8
4
0
-4
-50
-25
0
25
50
75
100
125
150
0
20
40
60
80
100
Junction Temperature TJ (°C)
Gate Charge, QG (nC)
Figure 11. Threshold Voltage vs. Temperature
Figure 12. Gate Charge Characteristics
4
C3M0030090K Rev. A, 05-2018
CREE [ CREE, INC ]
