Typical Performance
110
100
90
80
70
60
50
40
30
20
10
0
500
450
400
350
300
250
200
150
100
50
Conditions:
TJ ≤ 175 °C
Conditions:
TJ ≤ 175 °C
0
-55
-30
-5
20
45
70
95
120
145
170
-55
-30
-5
20
45
70
95
120
145
170
Case Temperature, TC (°C)
Case Temperature, TC (°C)
Figure 19. Continuous Drain Current Derating vs.
Case Temperature
Figure 20. Maximum Power Dissipation Derating vs.
Case Temperature
100.00
1
10 µs
Limited by RDS On
100 µs
1 ms
10.00
0.5
0.3
100 ms
100E-3
0.1
1.00
0.10
0.01
0.05
0.02
0.01
10E-3
1E-3
Conditions:
TC = 25 °C
D = 0,
SinglePulse
Parameter: tp
0.1
1
10
100
1000
1E-6
10E-6
100E-6
1E-3
Time, tp (s)
10E-3
100E-3
1
Drain-Source Voltage, VDS (V)
Figure 21. Transient Thermal Impedance
(Junction - Case)
Figure 22. Safe Operating Area
2.5
1.5
ETotal
Conditions:
Conditions:
TJ = 25 °C
VDD = 800 V
TJ = 25 °C
VDD = 600 V
ETotal
RG(ext) = 2.5 Ω
RG(ext) = 2.5 Ω
VGS = -4V/+15V
FWD = C3M0021120K
L = 157 μH
2
1.5
1
VGS = -4V/+15V
FWD = C3M0021120K
L = 157 μH
EOn
1
EOn
0.5
EOff
EOff
0.5
0
0
0
10
20
30
40
50
60
70
80
90
0
10
20
30
40
50
60
70
Drain to Source Current, IDS (A)
Drain to Source Current, IDS (A)
Figure 23. Clamped Inductive Switching Energy vs.
Drain Current (VDD = 600V)
Figure 24. Clamped Inductive Switching Energy vs.
Drain Current (VDD = 800V)
6
C3M0021120K Rev. -, 07-2019