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C3M0021120K 参数 Datasheet PDF下载

C3M0021120K图片预览
型号: C3M0021120K
PDF下载: 下载PDF文件 查看货源
内容描述: [Silicon Carbide Power MOSFET C3MTM MOSFET Technology]
分类和应用:
文件页数/大小: 11 页 / 926 K
品牌: CREE [ CREE, INC ]
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Typical Performance  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
500  
450  
400  
350  
300  
250  
200  
150  
100  
50  
Conditions:  
TJ ≤ 175 °C  
Conditions:  
TJ ≤ 175 °C  
0
-55  
-30  
-5  
20  
45  
70  
95  
120  
145  
170  
-55  
-30  
-5  
20  
45  
70  
95  
120  
145  
170  
Case Temperature, TC (°C)  
Case Temperature, TC (°C)  
Figure 19. Continuous Drain Current Derating vs.  
Case Temperature  
Figure 20. Maximum Power Dissipation Derating vs.  
Case Temperature  
100.00  
1
10 µs  
Limited by RDS On  
100 µs  
1 ms  
10.00  
0.5  
0.3  
100 ms  
100E-3  
0.1  
1.00  
0.10  
0.01  
0.05  
0.02  
0.01  
10E-3  
1E-3  
Conditions:  
TC = 25 °C  
D = 0,  
SinglePulse  
Parameter: tp  
0.1  
1
10  
100  
1000  
1E-6  
10E-6  
100E-6  
1E-3  
Time, tp (s)  
10E-3  
100E-3  
1
Drain-Source Voltage, VDS (V)  
Figure 21. Transient Thermal Impedance  
(Junction - Case)  
Figure 22. Safe Operating Area  
2.5  
1.5  
ETotal  
Conditions:  
Conditions:  
TJ = 25 °C  
VDD = 800 V  
TJ = 25 °C  
VDD = 600 V  
ETotal  
RG(ext) = 2.5 Ω  
RG(ext) = 2.5 Ω  
VGS = -4V/+15V  
FWD = C3M0021120K  
L = 157 μH  
2
1.5  
1
VGS = -4V/+15V  
FWD = C3M0021120K  
L = 157 μH  
EOn  
1
EOn  
0.5  
EOff  
EOff  
0.5  
0
0
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
0
10  
20  
30  
40  
50  
60  
70  
Drain to Source Current, IDS (A)  
Drain to Source Current, IDS (A)  
Figure 23. Clamped Inductive Switching Energy vs.  
Drain Current (VDD = 600V)  
Figure 24. Clamped Inductive Switching Energy vs.  
Drain Current (VDD = 800V)  
6
C3M0021120K Rev. -, 07-2019  
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