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C3M0021120K 参数 Datasheet PDF下载

C3M0021120K图片预览
型号: C3M0021120K
PDF下载: 下载PDF文件 查看货源
内容描述: [Silicon Carbide Power MOSFET C3MTM MOSFET Technology]
分类和应用:
文件页数/大小: 11 页 / 926 K
品牌: CREE [ CREE, INC ]
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Electrical Characteristics (TC = 25˚C unless otherwise specified)  
Symbol  
Parameter  
Min.  
1200  
1.8  
Typ.  
Max. Unit  
Test Conditions  
Note  
V(BR)DSS  
Drain-Source Breakdown Voltage  
V
VGS = 0 V, ID = 100 μA  
2.5  
2.0  
1
3.6  
VDS = VGS, ID = 17.7 mA  
V
V
VGS(th)  
Gate Threshold Voltage  
Fig. 11  
VDS = VGS, ID = 17.7 mA, TJ = 175ºC  
VDS = 1200 V, VGS = 0 V  
IDSS  
IGSS  
Zero Gate Voltage Drain Current  
Gate-Source Leakage Current  
50  
μA  
nA  
10  
21  
38  
35  
33  
250  
28.8  
VGS = 15 V, VDS = 0 V  
VGS = 15 V, ID = 50 A  
Fig. 4,  
5, 6  
RDS(on)  
Drain-Source On-State Resistance  
Transconductance  
mΩ  
VGS = 15 V, ID = 50 A, TJ = 175ºC  
VDS= 20 V, IDS= 50 A  
gfs  
S
Fig. 7  
VDS= 20 V, IDS= 50 A, TJ = 175ºC  
Ciss  
Coss  
Crss  
Eoss  
Input Capacitance  
4818  
180  
12  
VGS = 0 V, VDS = 1000 V  
Fig. 17,  
18  
Output Capacitance  
Reverse Transfer Capacitance  
Coss Stored Energy  
pF  
f = 1 MHz  
AC  
V
= 25 mV  
99  
μJ  
Fig. 16  
EON  
Turn-On Switching Energy (SiC Diode FWD)  
0.69  
VDS = 800 V, VGS = -4 V/+15 V, ID = 50 A,  
Fig. 26,  
29  
mJ  
RG(ext) = 2.5Ω, L= 157 μH, TJ = 175ºC  
EOFF  
EON  
EOFF  
td(on)  
tr  
Turn Off Switching Energy (SiC Diode FWD)  
Turn-On Switching Energy (Body Diode FWD)  
Turn Off Switching Energy (Body Diode FWD)  
Turn-On Delay Time  
0.42  
1.58  
0.34  
29  
VDS = 800 V, VGS = -4 V/+15 V, ID = 50 A,  
Fig. 26,  
29  
mJ  
ns  
RG(ext) = 2.5Ω, L= 157 μH, TJ = 175ºC  
VDD = 800 V, VGS = -4 V/15 V  
RG(ext) = 2.5 Ω,  
Rise Time  
33  
Fig. 27  
td(off)  
tf  
Turn-Off Delay Time  
Fall Time  
57  
14  
L= 157 μH  
,
RG(int)  
Qgs  
Qgd  
Qg  
Internal Gate Resistance  
Gate to Source Charge  
Gate to Drain Charge  
Total Gate Charge  
3.3  
49  
f = 1 MHz VAC = 25 mV  
VDS = 800 V, VGS = -4 V/15 V  
ID = 50 A  
50  
nC  
Fig. 12  
Per IEC60747-8-4 pg 21  
162  
(T = 25˚C unless otherwise specified)  
Reverse Diode Characteristics  
C
Symbol  
Parameter  
Typ.  
Max.  
Unit  
Test Conditions  
Note  
4.6  
V
VGS = -4 V, ISD = 25 A, T = 25 °C  
J
Fig. 8,  
9, 10  
VSD  
Diode Forward Voltage  
4.2  
V
A
VGS = -4 V, ISD = 25 A, T = 175 °C  
J
IS  
IS, pulse  
trr  
Continuous Diode Forward Current  
Diode pulse Current  
90  
VGS = -4 V, TC = 25˚C  
Note 1  
Note 1  
200  
A
VGS = -4 V, pulse width tP limited by Tjmax  
Reverse Recover time  
34  
928  
42  
ns  
nC  
A
VGS = -4 V, ISD = 50 A, VR = 800 V  
Note 1  
Qrr  
Reverse Recovery Charge  
Peak Reverse Recovery Current  
dif/dt = 2600 A/µs, T = 175 °C  
J
Irrm  
Thermal Characteristics  
Typ.  
0.32  
40  
Test Conditions  
Note  
Symbol  
RθJC  
Parameter  
Unit  
Thermal Resistance from Junction to Case  
°C/W  
Fig. 21  
RθJA  
Thermal Resistance From Junction to Ambient  
2
C3M0021120K Rev. -, 07-2019  
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