Typical Performance
8
7
6
5
4
3
2
1
0
Conditions:
TJ = 25 °C
Conditions:
DS = 50 A
I
7
VDD = 1200 V
V
R
V
DD = 1200 V
G(ext) = 2.5 Ω
GS = -5V/+20 V
I
V
DS = 50 A
GS = -5V/+20 V
ETotal
6
5
4
3
2
1
0
FWD = C2M0045170D
L = 105 μH
FWD = C2M0045170D
(- - -) FWD = C3D25170H
L = 105 μH
ETotal
EOn
EOn
ETotal
EOn
EOff
EOff
EOff
0
5
10
15
20
25
0
25
50
75
100
125
150
175
External Gate Resistor RG(ext) (Ohms)
Junction Temperature, TJ (°C)
Figure 26. Clamped Inductive Switching Energy vs.
Temperature
Figure 25. Clamped Inductive Switching Energy vs. RG(ext)
160
140
120
100
80
Conditions:
TJ = 25 °C
V
I
V
DD = 1200 V
DS = 50 A
GS = -5V/+20 V
td(off)
FWD = C2M0045170D
L = 105 μH
td(on)
60
tf
40
tr
20
0
0
5
10
15
20
25
External Gate Resistor RG(ext) (Ohms)
Figureꢀ28.ꢀSwitchingꢀTimesꢀDefinition
Figure 27. Switching Times vs. RG(ext)ꢀ
7
C2M0045170D Rev. -, 06-2016
CREE [ CREE, INC ]
