Electrical Characteristics (TCꢀ=ꢀ25˚Cꢀunlessꢀotherwiseꢀspecified)
Symbol
Parameter
Min.
1700
2.0
Typ.
Max. Unit
Test Conditions
Note
V(BR)DSS
Drain-Source Breakdown Voltage
V
VGS = 0 V, IDꢀ=ꢀ100ꢀμA
2.6
1.8
2
4
VDS = VGS, ID = 18mA
V
V
VGS(th)
Gate Threshold Voltage
Fig. 11
VDS = VGS, ID = 18mA, TJ = 150 °C
VDS = 1700 V, VGS = 0 V
VGS = 20 V, VDS = 0 V
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
100
600
70
μA
nA
45
90
VGS = 20 V, ID = 50 A
Fig.
4,5,6
RDS(on)
Drain-Source On-State Resistance
Transconductance
mΩ
VGS = 20 V, ID = 50 A, TJ = 150 °C
VDS= 20 V, IDS= 50 A
21.7
24.4
gfs
S
Fig. 7
VDS= 20 V, IDS= 50 A, TJ = 150 °C
Ciss
Coss
Crss
Eoss
EON
EOFF
EON
EOFF
td(on)
tr
Input Capacitance
3672
171
6.7
VGS = 0 V
Fig.
17,18
Output Capacitance
pF
VDS = 1000 V
Reverse Transfer Capacitance
Coss Stored Energy
f = 1 MHz
AC
V
= 25 mV
105
2.1
μJ
Fig 16
VDS = 1200 V, VGS = -5/20 V,
Fig. 26,
29b
Note 2
Turn-OnꢀSwitchingꢀEnergyꢀ(SiCꢀDiodeꢀFWD)
TurnꢀOffꢀSwitchingꢀEnergyꢀ(SiCꢀDiodeꢀFWD)
Turn-OnꢀSwitchingꢀEnergyꢀ(BodyꢀDiodeꢀFWD)
TurnꢀOffꢀSwitchingꢀEnergyꢀ(BodyꢀDiodeꢀFWD)
Turn-On Delay Time
mJ
ID = 50A, RG(ext)ꢀ=ꢀ2.5Ω,ꢀL=ꢀ105ꢀμH,ꢀ
TJ = 150 °C, using SiC Diode as FWD
0.86
4.7
VDS = 1200 V, VGS = -5/20 V,
Fig. 26,
29a
Note 2
mJ
ns
ID = 50A, RG(ext)ꢀ=ꢀ2.5Ω,ꢀL=ꢀ105ꢀμH,ꢀ
TJ = 150 °C, using MOSFET as FWD
0.93
65
VDD = 1200 V, VGS = -5/20 V
ID = 50 A,
RG(ext)ꢀ=ꢀ2.5ꢀΩ,ꢀꢀTimingꢀrelativeꢀtoꢀVDS
Inductive load
Fig. 27,
29
Note 2
Rise Time
20
td(off)
Turn-Off Delay Time
48
tf
RG(int)
Qgs
Qgd
Qg
Fall Time
18
1.3
44
,
Internal Gate Resistance
Gate to Source Charge
Gate to Drain Charge
Total Gate Charge
Ω
f = 1 MHz VAC = 25 mV
VDS = 1200 V, VGS = -5/20 V
ID = 50 A
57
nC
Fig. 12
Per IEC60747-8-4 pg 21
188
Reverse Diode Characteristics
Symbol
Parameter
Typ.
Max.
Unit
Test Conditions
Note
4.1
3.6
V
V
A
VGS = - 5 V, ISD = 25 A
Fig. 8, 9,
10
VSD
Diode Forward Voltage
Note 1
VGS = - 5 V, ISD = 25 A, T = 150 °C
J
IS
trr
Continuous Diode Forward Current
Reverse Recovery Time
72
TC= 25 °C, VGS = - 5 V
Note 1
70
530
14
ns
nC
A
VGS = - 5 V, ISD = 50 A , VR = 1200 V
dif/dt = 1400 A/µs
Qrr
Irrm
Reverse Recovery Charge
Note 1
Peak Reverse Recovery Current
Noteꢀ(1):ꢀWhenꢀusingꢀSiCꢀBodyꢀDiodeꢀtheꢀmaximumꢀrecommendedꢀVGS = -5V
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
Unit
Test Conditions
Note
RθJC
RθJC
Thermal Resistance from Junction to Case
Thermal Resistance from Junction to Ambient
0.22
0.24
40
Fig. 21
°C/W
2
C2M0045170D Rev. -, 06-2016
CREE [ CREE, INC ]
