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CPC3703_12 参数 Datasheet PDF下载

CPC3703_12图片预览
型号: CPC3703_12
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道耗尽型垂直DMOS FET [N-Channel Depletion-Mode Vertical DMOS FET]
分类和应用:
文件页数/大小: 5 页 / 106 K
品牌: CLARE [ CLARE ]
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CPC3703  
Absolute Maximum Ratings @ 25ºC (Unless Otherwise Noted)  
Absolute Maximum Ratings are stress ratings. Stresses in  
excess of these ratings can cause permanent damage to  
the device. Functional operation of the device at conditions  
beyond those indicated in the operational sections of this  
data sheet is not implied.  
Parameter  
Ratings  
250  
Units  
VP  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
Pulsed Drain Current  
Total Package Dissipation 1  
Junction Temperature  
Operational Temperature, Ambient  
Storage Temperature  
15  
VP  
600  
mA  
W
1.1  
125  
ºC  
ºC  
ºC  
-55 to +125  
-55 to +125  
1 Mounted on 1"x1"x0.062" FR4 board.  
Electrical Characteristics @ 25ºC (Unless Otherwise Noted)  
Parameter  
Symbol  
V(BR)DSX  
VGS(off)  
Conditions  
VGS= -5V, ID=100µA  
VDS= 5V, ID=1mA  
VDS= 5V, ID=1A  
VGS= 15V, VDS=0V  
VGS= -5V, VDS=250V  
Min  
250  
Typ  
-
Max Units  
Drain-to-Source Breakdown Voltage  
Gate-to-Source Off Voltage  
Change in VGS(off) with Temperature  
Gate Body Leakage Current  
-
-3.9  
4.5  
100  
1
V
-1.6  
-
V
dVGS(off) /dT  
IGSS  
-
-
mV/ºC  
nA  
-
-
-
-
µA  
Drain-to-Source Leakage Current  
ID(off)  
VGS= -5V, VDS=200V, T =125ºC  
-
360  
-
-
-
1
mA  
mA  
A
Saturated Drain-to-Source Current  
Static Drain-to-Source On-State Resistance  
Change in RDS(on) with Temperature  
Forward Transconductance  
IDSS  
RDS(on)  
dRDS(on) /dT  
GFS  
VGS= 0V, VDS=15V  
-
-
4
VGS= 0V, ID=200mA  
-
-
1.1  
-
%/ºC  
ID= 100mA, VDS = 10V  
VGS= -5V  
225  
-
m
Input Capacitance  
CISS  
327  
51  
27  
350  
65  
35  
Common Source Output Capacitance  
Reverse Transfer Capacitance  
COSS  
VDS= 25V  
-
-
pF  
ns  
CRSS  
f= 1MHz  
Turn-On Delay Time  
Rise Time  
td(on)  
tr  
td(off)  
tf  
VDD= 25V  
23  
8
35  
20  
25  
ID= 150mA  
Turn-Off Delay Time  
Fall Time  
17  
70  
VGS= 0V to -10V  
80  
Rgen= 50  
VGS= -5V, ISD=150mA  
Source-Drain Diode Voltage Drop  
VSD  
0.6  
90  
-
-
1.8  
-
V
Thermal Resistance (Junction to Ambient)  
RJA  
-
ºC/W  
VDD  
Switching Waveform & Test Circuit  
R
L
0V  
90%  
PULSE  
GENERATOR  
INPUT  
OUTPUT  
10%  
-10V  
R
gen  
t
t
on  
off  
t
t
t
t
f
d(on)  
d(off)  
r
D.U.T.  
VDS  
0V  
INPUT  
90%  
90%  
OUTPUT  
10%  
10%  
R04  
2
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