CPC3703
N-Channel Depletion-Mode
Vertical DMOS FET
V
(BR)DSX
/
V
(BR)DGX
250V
R
DS(on)
(max)
4
I
DSS
(min)
360mA
Package
SOT-89
Description
The CPC3703 is an N-channel, depletion mode, field
effect transistor (FET) that utilizes Clare’s proprietary
third-generation vertical DMOS process. The
third-generation process realizes world class, high
voltage MOSFET performance in an economical
silicon gate process. Our vertical DMOS process
yields a robust device, with high input impedance, for
use in high-power applications. The CPC3703 is a
highly reliable device that has been used extensively
in Clare’s Solid State Relays for industrial and
telecommunications applications.
This device excels in power applications that require
low drain-source resistance, particularly in cold
environments such as automotive ignition modules.
The CPC3703 offers a low, 4 maximum, on-state
resistance at 25ºC.
The CPC3703 has a minimum breakdown voltage of
250V, and is available in an SOT-89 package. As with
all MOS devices, the FET structure prevents thermal
runaway and thermal-induced secondary breakdown.
Features
•
•
•
•
High Breakdown Voltage: 250V
Low On-Resistance: 4 max. at 25ºC
Low V
GS(off)
Voltage: -1.6 to -3.9V
Depletion Mode Device Offers Low R
DS(on)
at Cold Temperatures
•
High Input Impedance
•
Small Package Size: SOT-89
Applications
•
•
•
•
•
•
Ignition Modules
Normally-On Switches
Solid State Relays
Converters
Telecommunications
Power Supply
Ordering Information
Part #
CPC3703C
Description
N-Channel Depletion Mode FET, SOT-89 Pkg.
Cut-Tape, Available in Quantities of 200, 300,
400, 500, and 600
N-Channel Depletion Mode FET, SOT-89 Pkg.
Tape and Reel (1000/Reel)
CPC3703CTR
Package Pinout
D
G
D
S
Circuit Symbol
D
G
(SOT-89)
S
Pb
DS-CPC3703-R04
RoHS
2002/95/EC
e
3
www.clare.com
1
CLARE [ CLARE, INC. ]
