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CPC3720 参数 Datasheet PDF下载

CPC3720图片预览
型号: CPC3720
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道耗尽型场效应晶体管模式 [N-Channel Depletion-Mode FET]
分类和应用: 晶体晶体管场效应晶体管
文件页数/大小: 5 页 / 106 K
品牌: CLARE [ CLARE ]
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CPC3720  
PRELIMINARY  
Absolute Maximum Ratings @ 25ºC  
Absolute Maximum Ratings are stress ratings. Stresses in  
excess of these ratings can cause permanent damage to  
the device. Functional operation of the device at conditions  
beyond those indicated in the operational sections of this  
data sheet is not implied.  
Parameter  
Ratings  
350  
Units  
VP  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
Pulsed Drain Current  
Total Package Dissipation  
Junction Temperature  
Operational Temperature  
15  
VP  
600  
1.4 1  
mA  
W
150  
ºC  
ºC  
ºC  
-55 to +125  
-55 to +125  
Storage Temperature  
1 Mounted on FR4 board 1"x1"x0.062"  
Electrical Characteristics @ 25ºC (Unless Otherwise Noted)  
Parameter  
Symbol  
V(BR)DSX  
VGS(off)  
Conditions  
VGS= -5V, ID=100µA  
VDS= 5V, ID=1mA  
VDS= 5V, ID=1A  
VGS= 15V, VDS=0V  
VGS= -5V, VDS=350V  
Min  
Typ  
-
Max Units  
Drain-to-Source Breakdown Voltage  
Gate-to-Source Off Voltage  
Change in VGS(off) with Temperatures  
Gate Body Leakage Current  
350  
-
-3.9  
4.5  
100  
1
VP  
V
-1.6  
-
dVGS(off)/dT  
IGSS  
-
-
mV/ºC  
nA  
-
-
-
-
A  
Drain-to-Source Leakage Current  
ID(off)  
V
GS= -5V, VDS=280V, T =125ºC  
-
130  
-
-
1
mA  
mA  
A
Saturated Drain-to-Source Current  
Static Drain-to-Source ON-State Resistance  
Change in RDS(on) with Temperatures  
Forward Transconductance  
Input Capacitance  
IDSS  
RDS(on)  
dRDS(on)/dT  
GFS  
VGS= 0V, VDS=15V  
VGS= 0V, ID=130mA  
VGS= 0V, ID=130mA  
ID= 100mA, VDS = 10V  
-
-
-
22  
1.1  
-
-
-
%/ºC  
m
225  
-
CISS  
70  
20  
10  
20  
10  
20  
50  
0.6  
90  
350  
60  
60  
VGS= -5V  
VDS= 25V  
f= 1MHz  
Common Source Output Capacitance  
Reverse Transfer Capacitance  
Turn-On Delay Time  
COSS  
CRSS  
td(on)  
-
-
pF  
VDD= 25V  
ID= 150mA  
VGS= 0V to -10V  
Rise Time  
tr  
-
ns  
Turn-Off Delay Time  
td(off)  
Rgen= 50  
Fall time  
tf  
Source-Drain Diode Voltage Drop  
Thermal Resistance (Junction to Ambient)  
VSD  
VGS= -5V, ISD= 150mA  
-
-
-
1.8  
-
V
RJA  
ºC/W  
VDD  
Switching Waveform & Test Circuit  
R
L
0V  
90%  
PULSE  
GENERATOR  
INPUT  
OUTPUT  
10%  
-10V  
R
gen  
t
t
on  
off  
t
t
t
t
f
d(on)  
d(off)  
r
D.U.T.  
VDS  
0V  
INPUT  
90%  
90%  
OUTPUT  
10%  
10%  
R00D  
2
PRELIMINARY